Ultra fast (<1 ns) electrical characterization of self-heating effect and its impact on hot carrier injection in 14nm FinFETs

2017 ◽  
Author(s):  
Yiming Qu ◽  
Xi Lin ◽  
Junkang Li ◽  
Ran Cheng ◽  
Xiao Yu ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Heating Effect ◽  
Carrier Injection ◽  
Hot Carrier ◽  
Self Heating ◽  
Hot Carrier Injection

Impact of self-heating effect in hot carrier injection modeling

2018 ◽  
Author(s):  
Dong Seup Lee ◽  
Dhanoop Varghese ◽  
Arif Sonnet ◽  
Jungwoo Joh ◽  
Archana Venugopal ◽  
...  
Keyword(s):  
Heating Effect ◽  
Carrier Injection ◽  
Hot Carrier ◽  
Self Heating ◽  
Hot Carrier Injection

Modelling and Characterization of Submicron P-Channel MOSFET's Locally Degraded by Hot Carrier Injection

1991 ◽  
Vol 225 ◽  
Author(s):  
A. Hassein-Bey ◽  
S. Cristoloveanu
Keyword(s):  
Practical Method ◽  
Parameter Extraction ◽  
Carrier Injection ◽  
Hot Carrier ◽  
Hot Carrier Injection ◽  
Strong Inversion ◽  
Before And After ◽  
Basic Characteristics ◽  
Channel Region

ABSTRACTThe influence of the localized defective channel region formed by hot carrier injection on the basic characteristics of P-channel transistors is systematically investigated and modeled. A practical method of parameter extraction in stressed P-MOSFET's is proposed. It is based on the comparison of Ids(Vg) characteristics before and after stress in weak and strong inversion.

scholarly journals Investigating the Impact of Self-Heating Effects on Some Thermal and Electrical Characteristics of Dielectric Pocket Gate-All-Around (DPGAA) MOSFETs

2021 ◽  
Author(s):  
Vaibhav Purwar ◽  
Rajeev Gupta ◽  
Pramod Kumar Tiwari ◽  
Sarvesh Dubey
Keyword(s):  
Thermal Contact ◽  
Three Dimensional ◽  
Carrier Injection ◽  
Spacer Length ◽  
Hot Carrier ◽  
Self Heating ◽  
Hot Carrier Injection ◽  
Carrier Temperature ◽  
Heating Effects ◽  
The Impact

Abstract The dielectric pocket gate-all-around (DPGAA) MOSFET is being considered the best suited candidate for ULSI electronic chips because of excellent electrostatic control over the channel. However, the phenomena of self-heating and hot carrier injection (HCI) severely affect the performance of the device, and make the behaviour of the DPGAA FET very unpredictable. In the present article, a comprehensive investigation under the influence of self-heating effects has been done for the variation in the lattice and carrier temperature against spacer length, ambient temperature, device length, and thermal contact resistance including ON and Off currents with gate bias voltage (VGS). In order to analyse the SHEs, the hydrodynamic (HD) and thermodynamic (TD) transport models have been used for three-dimensional (3D) electrothermal (ET) simulation. The Lucky (hot carrier injection) model has been used to study the HCI degradation in DPGAA MOSFET using Sentaurus 3D TCAD simulator.

Analysis of Hot Carrier Injection According to Gate Length

2019 ◽  
Vol 19 (10) ◽  
pp. 6746-6749 ◽  
Author(s):  
Taejin Jang ◽  
Myung-Hyun Baek ◽  
Min-Woo Kwon ◽  
Sungmin Hwang ◽  
Jeesoo Chang ◽  
...  
Keyword(s):  
Gate Length ◽  
Carrier Injection ◽  
Hot Carrier ◽  
Hot Carrier Injection
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