nmos transistor
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2021 ◽  
Author(s):  
Sorapong Wachirarattanapornkul
Keyword(s):  




Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 546
Author(s):  
Cheng Cao ◽  
Xiuping Li ◽  
Yubing Li ◽  
Hongjie Zeng ◽  
Zhe Wang ◽  
...  

This work proposes a novel linearized low noise amplifier (LNA) for X-band applications with flat power gain, low noise performance and enhanced linearity. In this study, a triple-cascode topology with dual-resonant network is utilized and a modified post-distortion network is introduced to improve the linearity. The LNA utilizes a subthreshold auxiliary NMOS transistor to reduce the nonlinearity with low power consumption. In addition, a methodology is proposed to predict the characteristic of the linearity performance of the proposed LNA with modified post-distortion network. With a small increase of 1 mW in power consumption due to the inclusion of the post-distortion network, the input intercept point IIP3 is improved and lies in the range of −3 to +8 dBm over the frequency range from 8 to 12 GHz. Implemented in Global Foundries 130 nm CMOS process, the LNA achieves a peak gain of 18 dB, and a 1.3 dB minimum NF over 8 to 12 GHz. The proposed LNA requires an area of 1.2 mm2 and a power of 18 mW.



Author(s):  
Han Wui Then ◽  
M. Radosavljevic ◽  
N. Desai ◽  
R. Ehlert ◽  
V. Hadagali ◽  
...  


Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1372
Author(s):  
Muhammad Kamran Shereen ◽  
Muhammad Irfan Khattak ◽  
Mu’ath Al-Hasan

This paper presents a novel combo-reconfigurable architecture for the frequency and radiation patterning of a novel antenna system for future fifth-generation (5G) millimeter-wave mobile communication. The tuning system independently controls the frequency and radiation pattern shifts, without letting them affect each other. The proposed antenna consists of two patches, radiating at 28 GHz and 38 GHz. A negative-channel metal–oxide–semiconductor (NMOS) transistor was used as a switch for ON/OFF states. Frequency reconfiguration was controlled by switches SD1 and SD2, while pattern reconfigurability was achieved by SD3–SD18. The desired resonant frequencies of 28 GHz and 38 GHz were achieved by varying patch dimensions through the ON and OFF states of the SD1 and SD2 switches. Similarly, parasitic stubs on the ground are used to control surface currents, which results in pattern reconfiguration. The results were analyzed for 18 different combinations of the switch states. Adding/removing parasitic stubs and switches changed the beam steering angle (by 45° shift) from 0° to 180°, which modified the stub dimensions and changed the beam-width of the main lobe.



2020 ◽  
Vol 30 (7) ◽  
pp. 689-692 ◽  
Author(s):  
Nan Zhang ◽  
L. Belostotski ◽  
J. W. Haslett
Keyword(s):  


2019 ◽  
Vol 18 (1) ◽  
pp. 117-122
Author(s):  
Jianhua Ju ◽  
Eric Liu ◽  
Zhaoxu Shen ◽  
Allan Zhou ◽  
Jinhua Liu ◽  
...  




2018 ◽  
Vol 31 (12) ◽  
Author(s):  
Cheng Gao ◽  
Rui Zhang ◽  
Jiaoying Huang ◽  
Chengcheng Fu


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