Reduction of leakage current in GaN-based high-electron mobility transistor employing carbon-doped GaN superlattice buffer layers

2016 ◽  
Author(s):  
Mingsheng Xu ◽  
Yuanhang Weng ◽  
Hong Wang
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Buffer Layers ◽  
High Electron ◽  
High Electron Mobility ◽  
Carbon Doped

scholarly journals Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

2015 ◽  
Vol 107 (26) ◽  
pp. 262105 ◽  
Author(s):  
X. Li ◽  
J. Bergsten ◽  
D. Nilsson ◽  
Ö. Danielsson ◽  
H. Pedersen ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Carbon Doped ◽  
Gan Buffer Layer

AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-xMetamorphic Buffer Layers

2008 ◽  
Vol 47 (9) ◽  
pp. 7069-7072 ◽  
Author(s):  
Edward Yi Chang ◽  
Jui-Chien Huang ◽  
Yueh-Chin Lin ◽  
Yen-Chang Hsieh ◽  
Chia-Yuan Chang
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Buffer Layers ◽  
High Electron ◽  
Si Substrate ◽  
High Electron Mobility

scholarly journals Growths of Fe-doped GaN high-resistivity buffer layers for AlGaN/GaN high electron mobility transistor devices

2016 ◽  
Vol 65 (1) ◽  
pp. 016802
Author(s):  
Wang Kai ◽  
Xing Yan-Hui ◽  
Han Jun ◽  
Zhao Kang-Kang ◽  
Guo Li-Jian ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Buffer Layers ◽  
High Resistivity ◽  
High Electron ◽  
High Electron Mobility

AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers

2003 ◽  
Vol 42 (Part 1, No. 4A) ◽  
pp. 1588-1589 ◽  
Author(s):  
Jin-Ping Ao ◽  
Tao Wang ◽  
Daigo Kikuta ◽  
Yu-Huai Liu ◽  
Shiro Sakai ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Buffer Layers ◽  
High Electron ◽  
High Electron Mobility

scholarly journals Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

2018 ◽  
Vol 124 (5) ◽  
pp. 055702 ◽  
Author(s):  
F. S. Choi ◽  
J. T. Griffiths ◽  
Chris Ren ◽  
K. B. Lee ◽  
Z. H. Zaidi ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Buffer Layers ◽  
High Electron ◽  
High Electron Mobility ◽  
Leakage Mechanism ◽  
Vertical Leakage ◽  
Gan On Si
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