Negative-ion production of reactive elements from compound gases in the RF plasma-sputter-type heavy negative-ion source

Author(s):  
H. Tsuji ◽  
J. Ishikawa ◽  
T. Tomita ◽  
Y. Gotoh
Shinku ◽  
1995 ◽  
Vol 38 (3) ◽  
pp. 218-220
Author(s):  
Hiroshi TSUJI ◽  
Yoshio OKAYAMA ◽  
Yoshitaka TOYOTA ◽  
Yasuhito GOTOH ◽  
Junzo ISHIKAWA

1994 ◽  
Vol 65 (4) ◽  
pp. 1226-1226
Author(s):  
Hiroshi Tsuji ◽  
Junzo Ishikawa ◽  
Yasuyuki Kawabata ◽  
Yasuhito Gotoh

1994 ◽  
Vol 354 ◽  
Author(s):  
Junzo Ishikawa

AbstractNegative-ion implantation is a promising technique for forthcoming ULSI (more than 256 M bits) fabrication and TFT (for color LCD) fabrication, since the surface charging voltage of insulated electrodes or insulators implanted by negative ions is found to saturate within so few as several volts, no breakdown of insulators would be expected without a charge neutralizer in these fabrication processes. Scatter-less negative-ion implantation into powders is also possible. For this purpose an rf-plasma-sputter type heavy negative-ion source was developed, which can deliver several milliamperes of various kinds of negative ion currents such as boron, phosphor, silicon, carbon, copper, oxygen, etc. A medium current negative-ion implanter with a small version of this type of ion source has been developed.


2000 ◽  
Vol 71 (2) ◽  
pp. 883-886 ◽  
Author(s):  
M. Uematsu ◽  
T. Morishita ◽  
A. Hatayama ◽  
T. Sakurabayashi ◽  
M. Ogasawara

Author(s):  
G. D. Alton ◽  
R. Lohwasser ◽  
B. Cui ◽  
Y. Bao ◽  
T. Zhang ◽  
...  

2012 ◽  
Vol 83 (2) ◽  
pp. 02A313 ◽  
Author(s):  
R. Rácz ◽  
S. Biri ◽  
Z. Juhász ◽  
B. Sulik ◽  
J. Pálinkás

1990 ◽  
Vol 61 (1) ◽  
pp. 412-414 ◽  
Author(s):  
R. McAdams ◽  
R. F. King ◽  
A. F. Newman ◽  
A. J. T. Holmes

2020 ◽  
Vol 91 (2) ◽  
pp. 023502
Author(s):  
Masahiro Ichikawa ◽  
Atsushi Kojima ◽  
Junichi Hiratsuka ◽  
Masafumi Yoshida ◽  
Naotaka Umeda ◽  
...  

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