Negative-Ion Implantation

1994 ◽  
Vol 354 ◽  
Author(s):  
Junzo Ishikawa
Keyword(s):  
Ion Implantation ◽  
Negative Ions ◽  
Ion Source ◽  
Negative Ion ◽  
Rf Plasma ◽  
Ion Currents ◽  
Promising Technique ◽  
Surface Charging ◽  
Silicon Carbon ◽  
A Charge

AbstractNegative-ion implantation is a promising technique for forthcoming ULSI (more than 256 M bits) fabrication and TFT (for color LCD) fabrication, since the surface charging voltage of insulated electrodes or insulators implanted by negative ions is found to saturate within so few as several volts, no breakdown of insulators would be expected without a charge neutralizer in these fabrication processes. Scatter-less negative-ion implantation into powders is also possible. For this purpose an rf-plasma-sputter type heavy negative-ion source was developed, which can deliver several milliamperes of various kinds of negative ion currents such as boron, phosphor, silicon, carbon, copper, oxygen, etc. A medium current negative-ion implanter with a small version of this type of ion source has been developed.

Negative Ionen durch Elektronenstoß aus organischen Nitroverbindungen, Äthylnitrit und Äthylnitrat

1967 ◽  
Vol 22 (5) ◽  
pp. 700-704
Author(s):  
K. Jäger ◽  
A. Henglein
Keyword(s):  
Electron Impact ◽  
Negative Ions ◽  
Molecular Ions ◽  
Ion Source ◽  
Negative Ion ◽  
Electron Affinities ◽  
Low Intensity ◽  
Ion Molecule Reactions ◽  
Fragment Ions ◽  
Product Ions

Negative ion formation by electron impact has been studied in nitromethane, nitroethane, nitrobenzene, tetranitromethane, ethylnitrite and ethylnitrate. Appearance potentials, ionization efficiency curves and kinetic energies of negative ions were measured by using a Fox ion source. The electron affinities of C2H5O and of C (NO2)3 are discussed as well as the energetics of processes which yield NO2-. The electron capture in nitrobenzene and tetranitromethane leads to molecular ions [C6H5NO2~ in high, C (NO2)4 in very low intensity] besides many fragment ions. A number of product ions from negative ion-molecule reactions has also been found.

scholarly journals A high-intensity, RF plasma-sputter negative ion source

1999 ◽  
Author(s):  
G. D. Alton ◽  
R. Lohwasser ◽  
B. Cui ◽  
Y. Bao ◽  
T. Zhang ◽  
...  
Keyword(s):  
High Intensity ◽  
Ion Source ◽  
Negative Ion ◽  
Rf Plasma

Ultra-shallow Junction Formation via GeB- ion Implantation of Si

2000 ◽  
Vol 610 ◽  
Author(s):  
Xinming Lu ◽  
Lin Shao ◽  
Jianyue Jin ◽  
Qinmian Li ◽  
I. Rusakova ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealed Sample ◽  
Ion Source ◽  
Negative Ion ◽  
Cluster Ions ◽  
Junction Depth ◽  
Si Substrates ◽  
Transmission Electron ◽  
One Step ◽  
The One

AbstractGeB− Cluster ions have been used to effectively produce 0.65-2keV boron for low energy ion implantation. We have generated the GeB− cluster ions using the SNICS ion source (source of negative ion by cesium sputtering). Shallow junctions have been made by the GeB− cluster ions implanting into Si substrates at 15keV, 1×1015/cm2 and 5keV, 5×1014/cm2. The junction depth as small as 37nm has been achieved by rapid thermal annealing of the 5 keV sample at 1000°C for 1 second. A two-step annealing was also performed to study the diffusion of B in the GeB− ion cluster implanted Si by annealing the 15 keV implanted sample at 550°C/300sec+1000°C/10sec. We found that the junction depth of the two-step annealed sample was only half of the one-step annealed sample. TEM (transmission electron microscopy) showed clear recrystallization of the amorphized layer with no observable residual defects. We briefly discussed the role of Ge in regards to reduction of the junction depth.

RF plasma sputter-type DC-mode heavy negative ion source

1992 ◽  
Author(s):  
H. Tsuji ◽  
J. Ishikawa ◽  
Y. Gotoh ◽  
Y. Okada
Keyword(s):  
Ion Source ◽  
Negative Ion ◽  
Rf Plasma

22 A beam production of the uniform negative ions in the JT-60 negative ion source

2015 ◽  
Vol 96-97 ◽  
pp. 616-619 ◽  
Author(s):  
Masafumi Yoshida ◽  
Masaya Hanada ◽  
Atsushi Kojima ◽  
Mieko Kashiwagi ◽  
Larry R. Grisham ◽  
...  
Keyword(s):  
Negative Ions ◽  
Ion Source ◽  
Negative Ion ◽  
Beam Production

Negative Ionen durch Elektronenstoß an einigen organischen Schwefelverbindungen

1966 ◽  
Vol 21 (8) ◽  
pp. 1251-1259 ◽  
Author(s):  
K. Jäger ◽  
A. Henglein
Keyword(s):  
Electron Impact ◽  
Electron Capture ◽  
Chemical Reactions ◽  
Hydrogen Sulphide ◽  
Negative Ions ◽  
Ion Source ◽  
Ionization Efficiency ◽  
Dissociative Electron Capture ◽  
Negative Ion ◽  
Electron Affinities

Negative ion formation by electron impact has been studied in hydrogen sulphide, methylmercaptan, phenylmercaptan, benzylmercaptan, allylmercaptan, dimethylthioether, dimethyldisulphide and diallyldisulpbide. Appearance potentials, ionization efficiency curves and the kinetic energies of negative ions were measured by using a Fox ion source. The energies of various dissociative electron capture processses are discussed and electron affinities of some radicals of the types RS and RS2 are derived. Two chemical reactions of the CH2S- ion with dimethyldisulphide have been detected.

Positive secondary-ion mass spectrometric study of silicon nitride films on Si and GaAs with a cesium ion source

1985 ◽  
Vol 63 (6) ◽  
pp. 842-845 ◽  
Author(s):  
W. M. Lau ◽  
W. Vandervorst
Keyword(s):  
Chemical Vapor ◽  
Negative Ions ◽  
Mass Spectrometric Study ◽  
Ion Source ◽  
Negative Ion ◽  
Film Properties ◽  
Silicon Nitride Films ◽  
Secondary Ions ◽  
Chemical Vapor Deposited ◽  
Secondary Ion

The detection of positive secondary ions, as opposed to the conventional negative-ion detection, in conjunction with the use of a cesium primary-ion source was studied with a Cameca IMS-3F ion microscope. One advantage of this technique is that, unlike the detection of negative ions, charging of an insulating surface can be avoided. Plasma-enhanced chemical-vapor-deposited silicon nitrides on Si and GaAs were used as examples to demonstrate the usefulness of the technique. The distributions of species such as H, C, O, F, Al, Si, SiN, Ga, and As were measured. The correlation between these impurities and the film properties and the importance of monitoring their distribution are discussed in order to illustrate the applicability of the technique.

scholarly journals Negative-Ion Production of Gas Material in RF-Plasma Sputter-Type Heavy Negative-Ion Source.

Shinku ◽  
1995 ◽  
Vol 38 (3) ◽  
pp. 218-220
Author(s):  
Hiroshi TSUJI ◽  
Yoshio OKAYAMA ◽  
Yoshitaka TOYOTA ◽  
Yasuhito GOTOH ◽  
Junzo ISHIKAWA
Keyword(s):  
Ion Source ◽  
Negative Ion ◽  
Rf Plasma ◽  
Ion Production
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