Transient effects in SIMS depth profile analysis of 1 keV as implanted Si

Author(s):  
P.A.W. Van Der Heide ◽  
J.W. Rabalais ◽  
A. Al-Bayati
2010 ◽  
Vol 43 (1-2) ◽  
pp. 470-474 ◽  
Author(s):  
P. Konarski ◽  
K. Kaczorek ◽  
B. Balcerzak ◽  
J. Haluszka ◽  
M. Scibor ◽  
...  

Vacuum ◽  
2001 ◽  
Vol 63 (4) ◽  
pp. 685-689 ◽  
Author(s):  
Piotr Konarski ◽  
Iwonna Iwanejko ◽  
Agnieszka Mierzejewska ◽  
Artur Wymysłowski

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