SIMS depth profile analysis for investigations of the lithium-diffusion in hydrogenated amorphous silicon

1993 ◽  
Vol 346 (1-3) ◽  
pp. 92-95 ◽  
Author(s):  
U. Zastrow ◽  
W. Beyer ◽  
J. Herion
Keyword(s):  
Amorphous Silicon ◽  
Depth Profile ◽  
Profile Analysis ◽  
Hydrogenated Amorphous Silicon ◽  
Depth Profile Analysis ◽  
Lithium Diffusion ◽  
Hydrogenated Amorphous ◽  
Sims Depth Profile

SIMS depth profile analysis of particles collected in an urban environment

2010 ◽  
Vol 43 (1-2) ◽  
pp. 470-474 ◽  
Author(s):  
P. Konarski ◽  
K. Kaczorek ◽  
B. Balcerzak ◽  
J. Haluszka ◽  
M. Scibor ◽  
...  
Keyword(s):  
Urban Environment ◽  
Depth Profile ◽  
Profile Analysis ◽  
Depth Profile Analysis ◽  
Sims Depth Profile

Investigation of Light-Induced Defect Depth Profile in Hydrogenated Amorphous Silicon Films

2001 ◽  
Vol 664 ◽  
Author(s):  
S. Shimizu ◽  
P. Stradins ◽  
M. Kondo ◽  
A. Matsuda
Keyword(s):  
Amorphous Silicon ◽  
Depth Profile ◽  
Recombination Rate ◽  
Hydrogenated Amorphous Silicon ◽  
Layer By Layer ◽  
Etching Technique ◽  
Depth Profiles ◽  
Rate Profile ◽  
Induced Defects ◽  
Hydrogenated Amorphous

ABSTRACTWe report direct measurement of depth profile of light induced defects (LIDs) in hydrogenated amorphous silicon (a-Si:H) films. These depth profiles were measured by ESR measurements combined with layer-by-layer precise wet etching technique. We discuss those LIDs depth profiles in relation to the spatial depth distribution of photocarriers generation and recombination profiles, as well as the defect creation efficiency. In case of uniformly absorbed light, the light induced defects creation takes place uniformly in depth of the a-Si:H film. In case of nonuniformly absorbed light, the LIDs depth profile is spatially wider than photocarrier generation rate profile G(x), and depends on G(x) sublinearly. Moreover, the LID depth profile agrees well with the photocarrier direct recombination rate profile rather than the profile of total recombination rate or that through defects. The obtained results suggest that the LIDs creation takes place at local site where the photocarriers recombine directly.

Investigation of Light-Induced Defect Depth Profile in Hydrogenated Amorphous Silicon Films

2002 ◽  
Vol 41 (Part 2, No. 11B) ◽  
pp. L1297-L1299 ◽  
Author(s):  
Satoshi Shimizu ◽  
Paul Stradins ◽  
Michio Kondo ◽  
Akihisa Matsuda
Keyword(s):  
Amorphous Silicon ◽  
Depth Profile ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Defect Depth ◽  
Hydrogenated Amorphous
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