Fabrication of three-dimensional HSQ resist structure using electron beam lithography

Author(s):  
Y. Matsubara ◽  
J. Taniguchi ◽  
I. Miyamoto
Nano Letters ◽  
2018 ◽  
Vol 18 (8) ◽  
pp. 5036-5041 ◽  
Author(s):  
Yu Hong ◽  
Ding Zhao ◽  
Dongli Liu ◽  
Binze Ma ◽  
Guangnan Yao ◽  
...  

2019 ◽  
Vol 8 (3-4) ◽  
pp. 289-297 ◽  
Author(s):  
Kohei Goto ◽  
Jun Taniguchi

Abstract Methods for fabricating micro- and nanoscale three-dimensional (3D) structures such as electron-beam lithography (EBL) attracted attention in various fields. In EBL, an acceleration-voltage modulation method can be used to control the developing depth of the structure. In this study, we fabricated a rose petal structure using acceleration-voltage modulation. Using a rose petal mold, plastic- and silver-duplicated rose petals were prepared using nano-imprint lithography (NIL). We demonstrated that various complex 3D structures and materials can be duplicated using NIL by applying an acceleration-voltage modulation method.


2004 ◽  
Vol 43 (6B) ◽  
pp. 3762-3766 ◽  
Author(s):  
Kozo Ogino ◽  
Hiromi Hoshino ◽  
Yasuhide Machida ◽  
Morimi Osawa ◽  
Hiroshi Arimoto ◽  
...  

2009 ◽  
Vol 86 (4-6) ◽  
pp. 1103-1106 ◽  
Author(s):  
M. Prasciolu ◽  
F. Tamburini ◽  
G. Anzolin ◽  
E. Mari ◽  
M. Melli ◽  
...  

1996 ◽  
Author(s):  
Hans W. P. Koops ◽  
Sergey V. Babin ◽  
Mark A. Weber ◽  
G. Dahm ◽  
A. Holopkin ◽  
...  

2012 ◽  
Vol 18 (6) ◽  
pp. 1220-1228 ◽  
Author(s):  
Hendrix Demers ◽  
Nicolas Poirier-Demers ◽  
Matthew R. Phillips ◽  
Niels de Jonge ◽  
Dominique Drouin

AbstractThe Monte Carlo software CASINO has been expanded with new modules for the simulation of complex beam scanning patterns, for the simulation of cathodoluminescence (CL), and for the calculation of electron energy deposition in subregions of a three-dimensional (3D) volume. Two examples are presented of the application of these new capabilities of CASINO. First, the CL emission near threading dislocations in gallium nitride (GaN) was modeled. The CL emission simulation of threading dislocations in GaN demonstrated that a better signal-to-noise ratio was obtained with lower incident electron energy than with higher energy. Second, the capability to simulate the distribution of the deposited energy in 3D was used to determine exposure parameters for polymethylmethacrylate resist using electron-beam lithography (EBL). The energy deposition dose in the resist was compared for two different multibeam EBL schemes by changing the incident electron energy.


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