Polycrystalline CPP-GMR devices using textured Co2Fe(Ga0.5Ge0.5) Heusler alloy layer and conductive Mg0.5Ti0.5Ox buffer layer

2015 ◽  
Author(s):  
Y. Du ◽  
T. Furubayashi ◽  
Y. Takahashi ◽  
Y. Sakuraba ◽  
K. Hono
Keyword(s):  
Buffer Layer ◽  
Heusler Alloy ◽  
Alloy Layer

scholarly journals Growth of Crack-Free thick AlGaN Layer and its Application to GaN-Based Laser Diode

2000 ◽  
Vol 5 (S1) ◽  
pp. 452-458
Author(s):  
I. Akasaki ◽  
S. Kamiyama ◽  
T. Detchprohm ◽  
T. Takeuchi ◽  
H. Amano
Keyword(s):  
Buffer Layer ◽  
Laser Diode ◽  
Lattice Mismatch ◽  
Molar Fraction ◽  
Vertical Direction ◽  
Thick Layer ◽  
Group Iii Nitrides ◽  
Alloy Layer ◽  
Field Pattern ◽  
Group Iii

In the field of group-III nitrides, hetero-epitaxial growth has been one of the most important key technologies. A thick layer of AlGaN alloy with higher AlN molar fraction is difficult to grow on sapphire substrate, because the alloy layer is easily cracked. It is thought that one cause of generating cracks is a large lattice mismatch between an AlGaN and a GaN, when AlGaN is grown on the underlying GaN layer. We have achieved crack-free Al0.07Ga0.93N layer with the thickness of more than 1μm using underlying Al0.05Ga0.95N layer. The underlying Al0.05Ga0.95N layer was grown directly on sapphire by using the low-temperature-deposited buffer layer (LT-buffer layer). Since a lattice mismatch between the underlying Al0.05Ga0.95N layer and upper Al0.07Ga0.93N layer is relatively small, the generation of cracks is thought to be suppressed. This technology is applied to a GaN-based laser diode structure, in which thick n-Al0.07Ga0.93N cladding layer grown on the Al0.05Ga0.95N layer, improves optical confinement and single-robe far field pattern in vertical direction.

Fabrication of Co2MnAl Heusler Alloy Epitaxial Film Using Cr Buffer Layer

2005 ◽  
Vol 44 (9A) ◽  
pp. 6535-6537 ◽  
Author(s):  
Yuya Sakuraba ◽  
Jun Nakata ◽  
Mikihiko Oogane ◽  
Hitoshi Kubota ◽  
Yasuo Ando ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Heusler Alloy ◽  
Epitaxial Film

The Differences between the InyGa1−yAs/GaAs Interface and GaAs/InyGa1−yAs Interface in Superlattice over a InxGa1−xAs (x

1996 ◽  
Vol 442 ◽  
Author(s):  
X.J Wang ◽  
L.X Zheng ◽  
Z.B Xiao ◽  
Z.P Zhang ◽  
X.W Hu ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Strain Relaxation ◽  
Compressive Strain ◽  
Critical Value ◽  
Alloy Layer ◽  
Relaxation Model ◽  
Indium Composition ◽  
Partial Dislocations ◽  
The Difference ◽  
First Time

AbstractThe InyGa1−yAs/GaAs superlattice on InxGa1−x.As (x<y) buffer layer was grown by MOCVD. The well layer is under compressive strain and the barrier layer is under tensile strain. However, both layers do not exceed the calculated critical value based on the M−yAs interface was smoother than the InyGa1−yAs/GaAs interface; the Indium composition gradual region at the GaAs/InyGal1−yAs interface was narrower than that at the InyGa 1−yAs/GaAs interface; in InyGa1−yAs alloy layer, the Indium composition near the GaAs/InyGa1-yAs interface was higher than that near another interface. For the first time, we explained the composition profile in this kind of superlattice based on the indium segregation theory. A new strain relaxation model, in which the 30-degree and 90-degree shockley partial dislocations were taken into account under both tensile and compressive strains, was presented to explain the difference of the smoothness between the GaAs/InyGa1−yAs interface and the InyGa 1−yAs/GaAs interface.

Growth of Crack-Free Thick AlGaN Layer and its Application to GaN-Based Laser Diode

1999 ◽  
Vol 595 ◽  
Author(s):  
I. Akasaki ◽  
S. Kamiyama ◽  
T. Detchprohm ◽  
T. Takeuchi ◽  
H. Amano
Keyword(s):  
Buffer Layer ◽  
Laser Diode ◽  
Lattice Mismatch ◽  
Molar Fraction ◽  
Vertical Direction ◽  
Thick Layer ◽  
Group Iii Nitrides ◽  
Alloy Layer ◽  
Field Pattern ◽  
Group Iii

AbstractIn the field of group-III nitrides, hetero-epitaxial growth has been one of the most important key technologies. A thick layer of AlGaN alloy with higher AlN molar fraction is difficult to grow on sapphire substrate, because the alloy layer is easily cracked. It is thought that one cause of generating cracks is a large lattice mismatch between an AlGaN and a GaN, when AlGaN is grown on the underlying GaN layer. We have achieved crack-free Al0.07Ga0.93N layer with the thickness of more than 1mm using underlying Al0.05Ga0.95N layer. The underlying Al0.05Ga0.95N layer was grown directly on sapphire by using the lowtemperature-deposited buffer layer (LT-buffer layer). Since a lattice mismatch between the underlying Al0.05Ga0.95N layer and upper Al0.07Ga0.93N layer is relatively small, the generation of cracks is thought to be suppressed. This technology is applied to a GaN-based laser diode structure, in which thick n-Al0.07Ga0.93N cladding layer grown on the Al0.05Ga0.95N layer, improves optical confinement and single-robe far field pattern in vertical direction.

Buffer-Layer Dependence of Interface Magnetic Anisotropy in Co2Fe0.4Mn0.6Si Heusler Alloy Ultrathin Films

2017 ◽  
Vol 53 (11) ◽  
pp. 1-4 ◽  
Author(s):  
Mingling Sun ◽  
Takahide Kubota ◽  
Yoshiaki Kawato ◽  
Shigeki Takahashi ◽  
Arata Tsukamoto ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Buffer Layer ◽  
Ultrathin Films ◽  
Heusler Alloy

Superconducting Spin-Valve Effect in Structures with a Ferromagnetic Heusler Alloy Layer

2020 ◽  
Vol 131 (2) ◽  
pp. 311-321
Author(s):  
A. A. Kamashev ◽  
N. N. Garif’yanov ◽  
A. A. Validov ◽  
Ya. V. Fominov ◽  
I. A. Garifullin
Keyword(s):  
Heusler Alloy ◽  
Spin Valve ◽  
Alloy Layer ◽  
Valve Effect

In-Situ Study of NiO Growth on Textured Nickel Tape Using Environmental Scanning Electron Microscope (ESEM) and Hot Stage

2001 ◽  
Vol 7 (S2) ◽  
pp. 1276-1277
Author(s):  
Y. Akin ◽  
R.E. Goddard ◽  
W. Sigmund ◽  
Y.S. Hascicek
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Dip Coating ◽  
Buffer Layers ◽  
Superconducting Film ◽  
Environmental Scanning ◽  
Cold Rolling And Annealing

Deposition of highly textured ReBa2Cu3O7−δ (RBCO) films on metallic substrates requires a buffer layer to prevent chemical reactions, reduce lattice mismatch between metallic substrate and superconducting film layer, and to prevent diffusion of metal atoms into the superconductor film. Nickel tapes are bi-axially textured by cold rolling and annealing at appropriate temperature (RABiTS) for epitaxial growth of YBa2Cu3O7−δ (YBCO) films. As buffer layers, several oxide thin films and then YBCO were coated on bi-axially textured nickel tapes by dip coating sol-gel process. Biaxially oriented NiO on the cube-textured nickel tape by a process named Surface-Oxidation- Epitaxy (SEO) has been introduced as an alternative buffer layer. in this work we have studied in situ growth of nickel oxide by ESEM and hot stage.Representative cold rolled nickel tape (99.999%) was annealed in an electric furnace under 4% hydrogen-96% argon gas mixture at 1050°C to get bi-axially textured nickel tape.

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