PBTI response to interfacial layer thickness variation in Hf-based HKMG nFETs

2010 ◽  
Author(s):  
D.P. Ioannou ◽  
E. Cartier ◽  
Y. Wang ◽  
S. Mittl
Keyword(s):  
Layer Thickness ◽  
Interfacial Layer ◽  
Thickness Variation

scholarly journals Effect of layer thickness variation on sensitivity: An SPR based sensor for formalin detection

2021 ◽  
Vol 32 ◽  
pp. 100419
Author(s):  
Md. Moznuzzaman ◽  
Md. Rafiqul Islam ◽  
Imran Khan
Keyword(s):  
Layer Thickness ◽  
Thickness Variation

scholarly journals Impact of interfacial layer thickness on gate stack-based DGTFET: an analog/RF prospective

2021 ◽  
Vol 1070 (1) ◽  
pp. 012081
Author(s):  
Vibhu Goyal ◽  
Shubham Tayal ◽  
Shweta Meena ◽  
Ravi Gupta
Keyword(s):  
Layer Thickness ◽  
Interfacial Layer ◽  
Gate Stack

Impact of GeOx interfacial layer thickness on Al2O3/Ge MOS interface properties

2011 ◽  
Vol 88 (7) ◽  
pp. 1533-1536 ◽  
Author(s):  
R. Zhang ◽  
T. Iwasaki ◽  
N. Taoka ◽  
M. Takenaka ◽  
S. Takagi
Keyword(s):  
Layer Thickness ◽  
Interfacial Layer ◽  
Interface Properties

Modified Porod's law estimate of the transition-layer thickness between two phases: test of triangular smoothing function

2004 ◽  
Vol 37 (4) ◽  
pp. 643-651 ◽  
Author(s):  
Man-Ho Kim
Keyword(s):  
Layer Thickness ◽  
Density Profile ◽  
Analytical Method ◽  
Interfacial Layer ◽  
Gaussian Function ◽  
Negative Slope ◽  
Smoothing Function ◽  
Angle Scattering ◽  
Dependent Parameter ◽  
Two Phases

An analytical method to estimate the thickness of the interface between two phases from small-angle scattering (SAS) data has been developed using Porod's law modified by a triangular smoothing function. The convolution with a `top-hat' function describing a sharp density profile results in a semi-sigmoidal density profile. This analytical method allows an interfacial layer thickness to be estimated from the negative slope of a Porod plot. The interfacial layer thickness (T) obtained from this model is related to similar models, namely a linear (E) and a sigmoidal density profile (σ) model, as follows:T= 21/2E= 2(61/2)σ, where σ is the standard deviation of the Gaussian function and does not represent the boundary thickness itself. The interfacial layer thickness obtained from any convolution method is a model-dependent parameter.

Sign in / Sign up

Export Citation Format

Share Document