Dependence of tunneling magnetoresistance on CoFe interfacial layer thickness in NiFe/Al/sub 2/O/sub 3//NiFe tunnel junctions

The magnetoresistance of Fe/MgO/Fe magnetic tunnel junctions (MTJs) was studied taking into consideration image forces. For MTJs with an MgO insulator, explanations are given of the giant tunneling magnetoresistance (TMR) effect and the effect of the increasing TMR with an increase in MgO insulator thickness. It is demonstrated that the electron current density through MTJs can be high enough to switch the magnetization of a ferromagnetic electrode.

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Impact of interfacial layer thickness on gate stack-based DGTFET: an analog/RF prospective

IOP Conference Series Materials Science and Engineering ◽

10.1088/1757-899x/1070/1/012081 ◽

2021 ◽

Vol 1070 (1) ◽

pp. 012081

Author(s):

Vibhu Goyal ◽

Shubham Tayal ◽

Shweta Meena ◽

Ravi Gupta

Keyword(s):

Layer Thickness ◽

Interfacial Layer ◽

Gate Stack

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Symmetric and Asymmetric Magnetic Tunnel Junctions with Embedded Nanoparticles: Effects of Size Distribution and Temperature on Tunneling Magnetoresistance and Spin Transfer Torque

Scientific Reports ◽

10.1038/s41598-017-08354-7 ◽

2017 ◽

Vol 7 (1) ◽

Cited By ~ 5

Author(s):

Arthur Useinov ◽

Hsiu-Hau Lin ◽

Chih-Huang Lai

Keyword(s):

Size Distribution ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Tunneling Magnetoresistance ◽

Embedded Nanoparticles

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Oscillation of giant tunneling magnetoresistance with respect to tunneling barrier thickness in fully epitaxial Fe∕MgO∕Fe magnetic tunnel junctions

Applied Physics Letters ◽

10.1063/1.2750398 ◽

2007 ◽

Vol 90 (25) ◽

pp. 252506 ◽

Cited By ~ 34

Author(s):

Rie Matsumoto ◽

Akio Fukushima ◽

Taro Nagahama ◽

Yoshishige Suzuki ◽

Koji Ando ◽

...

Keyword(s):

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Barrier Thickness ◽

Tunneling Barrier

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Ferromagnetic barrier induced large enhancement of tunneling magnetoresistance in van der Waals perpendicular magnetic tunnel junctions

Nanoscale ◽

10.1039/d1nr04692f ◽

2021 ◽

Author(s):

Xiaolin Zhang ◽

Baishun Yang ◽

Xiaoyan Guo ◽

Xiufeng Han ◽

Yu Yan

Keyword(s):

Tunnel Junctions ◽

Van Der Waals ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Large Enhancement

Schematics of TMR effect of FGT/CrI3/FGT and FGT/ScI3/FGT vdW MTJs.

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Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions With a Rocksalt ZnO/MgO Bilayer Tunnel Barrier

Physical Review Applied ◽

10.1103/physrevapplied.11.064032 ◽

2019 ◽

Vol 11 (6) ◽

Cited By ~ 4

Author(s):

Hidekazu Saito ◽

Sai Krishna Narayananellore ◽

Norihiro Matsuo ◽

Naoki Doko ◽

Shintaro Kon ◽

...

Keyword(s):

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Tunnel Barrier

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Spin-filtering and tunneling magnetoresistance effects in 6,6,12-graphyne-based molecular magnetic tunnel junctions

Physical Chemistry Chemical Physics ◽

10.1039/c8cp06927a ◽

2019 ◽

Vol 21 (5) ◽

pp. 2734-2742 ◽

Cited By ~ 1

Author(s):

Jin Li ◽

Maoyun Di ◽

Zhi Yang ◽

Li-Chun Xu ◽

Yongzhen Yang ◽

...

Keyword(s):

Tunnel Junctions ◽

Graphene Nanoribbons ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Spintronic Devices ◽

Zigzag Graphene Nanoribbons ◽

Spin Filtering

By designing two kinds of molecular magnetic tunnel junctions based on 6,6,12-graphyne and zigzag graphene nanoribbons, the spin-filtering and tunneling magnetoresistance effects of spintronic devices can be dramatically enhanced.

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