Experimental Study on Effects of Boron Transient Enhanced Diffusion on Channel Size Dependences of Low Frequency Noise in NMOSFETs

2019 ◽  
Author(s):  
Shuntaro Fujii ◽  
Isao Maru ◽  
Soichi Morita ◽  
Tsutomu Miyazaki
Keyword(s):  
Experimental Study ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Channel Size ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Experimental Study on an Active Noise Control System for Turboprop Driven Aircraft

2013 ◽  
Vol 333-335 ◽  
pp. 2142-2145
Author(s):  
Qing Fu Kong ◽  
Yu Liang Dai ◽  
Shi Jian Zhu ◽  
Jia Ming Wu
Keyword(s):  
Experimental Study ◽  
Control System ◽  
Sound Source ◽  
Noise Control ◽  
Active Noise Control ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Experimental Platform ◽  
Active Noise

In order to find a solution to the control of low frequency noise in the cabin of turboprop driven aircraft, an experimental active noise control (ANC) system is introduced in the paper, which consists of vibroacoustic field analogue subsystem, acoustic field measurement subsystem and acoustic barrier exciter subsystem. Effects of both different spaces between the primary sound source and secondary sound source of the ANC system and different frequency noises on noise-reduction result are investigated based on the experimental platform. Results of the experiment show a significant potential of the ANC method for the control of low frequency noise in the cabin of turboprop driven aircraft.

Low Frequency Noise Behavior in a-Si:H Schottky Barrier Devices

1996 ◽  
Vol 420 ◽  
Author(s):  
K. Aflatooni ◽  
A. Nathan ◽  
R. Hornsey
Keyword(s):  
Experimental Study ◽  
Schottky Barrier ◽  
Schottky Diode ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Low Frequency ◽  
Reverse Current ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Material Instability

AbstractWe present a systematic experimental study of low frequency noise behavior in Mo/a-Si:H Schottky diodes under reverse bias operation. The noise in the Schottky diode was found to increase with increasing reverse current and with an approximate 1/f behavior at low bias voltages, yielding a Hooge parameter in the range (2 to 3) × 10−4. At high reverse voltages, due to electrical stressing and hence, bias-induced material instability, a significant deviation from the 1/f behavior was observed.

Channel size dependence of low-frequency noise in tri-gate silicon nanowire transistors

2015 ◽  
Vol 54 (4) ◽  
pp. 044201 ◽  
Author(s):  
Masumi Saitoh ◽  
Kensuke Ota ◽  
Chika Tanaka ◽  
Toshinori Numata
Keyword(s):  
Size Dependence ◽  
Silicon Nanowire ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Channel Size ◽  
Nanowire Transistors

Experimental study of excess low-frequency noise in tin

1982 ◽  
Vol 25 (2) ◽  
pp. 1427-1430 ◽  
Author(s):  
D. M. Fleetwood ◽  
N. Giordano
Keyword(s):  
Experimental Study ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise
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