WL under-driving scheme with decremental step voltage and incremental step time for high-capacity NAND flash memory

Author(s):  
Junyoung Ko ◽  
Younghwi Yang ◽  
Seong-ook Jung ◽  
Jisu Kim ◽  
Cheon An Lee ◽  
...  
2021 ◽  
Author(s):  
Jisuk Kim ◽  
Earl Kim ◽  
Daehyeon Lee ◽  
Taeheon Lee ◽  
Daesik Ham ◽  
...  

Abstract In the NAND flash manufacturing process, thousands of internal electronic fuses (eFuse) should be tuned in order to optimize performance and validity. In this paper, we propose a machine learning-based optimization technique that can automatically tune the individual eFuse value based on a deep learning and genetic algorithm. Using state-of-the-art triple-level cell (TLC) V-NAND flash wafers, we trained our model and validated its effectiveness. The experimental results show that our technique can automatically optimize NAND flash memory, thus reducing total turnaround time (TAT) by 70 % compared with the manual-based process.


1995 ◽  
Vol 30 (11) ◽  
pp. 1149-1156 ◽  
Author(s):  
Kang-Deog Suh ◽  
Byung-Hoon Suh ◽  
Young-Ho Lim ◽  
Jin-Ki Kim ◽  
Young-Joon Choi ◽  
...  

2019 ◽  
Vol 27 (8) ◽  
pp. 1828-1839
Author(s):  
Junyoung Ko ◽  
Younghwi Yang ◽  
Jisu Kim ◽  
Cheonan Lee ◽  
Young-Sun Min ◽  
...  

Author(s):  
Kang-Deog Suh ◽  
Byung-Hoon Suh ◽  
Young-Ho Um ◽  
Jin-Ki Kim ◽  
Young-Joon Choi ◽  
...  

Author(s):  
Daehoon Na ◽  
Jang-woo Lee ◽  
Seon-Kyoo Lee ◽  
Hwasuk Cho ◽  
Junha Lee ◽  
...  

2012 ◽  
Vol E95.C (5) ◽  
pp. 837-841 ◽  
Author(s):  
Se Hwan PARK ◽  
Yoon KIM ◽  
Wandong KIM ◽  
Joo Yun SEO ◽  
Hyungjin KIM ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document