Structural and Analytical Studies of 4H Silicon Carbide MOSFETs with Thermally Grown Oxides

2006 ◽  
Author(s):  
T. Zheleva ◽  
I. Levin ◽  
D. Habersat ◽  
A. Lelis ◽  
M. Dautrich ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Thermally Grown Oxides ◽  
Analytical Studies ◽  
Thermally Grown

Mobility degradation in gated Si:SiGe quantum wells with thermally grown oxides

1995 ◽  
Vol 31 (21) ◽  
pp. 1876-1878 ◽  
Author(s):  
R.S. Prasad ◽  
S. Kanjanachuchai ◽  
J. Fernández ◽  
T.J. Thornton ◽  
A. Matsumura
Keyword(s):  
Quantum Wells ◽  
Thermally Grown Oxides ◽  
Mobility Degradation ◽  
Thermally Grown

In Situ and Ex Situ Investigation of the Spallation of Thermally Grown Oxides

2007 ◽  
pp. 1134-1139
Author(s):  
Philippe Lours ◽  
Yu Hong Qi ◽  
Yannick Le Maoult ◽  
Bernard Pieraggi
Keyword(s):  
Ex Situ ◽  
Thermally Grown Oxides ◽  
Thermally Grown

Stabilization of Silicon Surfaces by Thermally Grown Oxides*

1959 ◽  
Vol 38 (3) ◽  
pp. 749-783 ◽  
Author(s):  
M. M. Atalla ◽  
E. Tannenbaum ◽  
E. J. Scheibner
Keyword(s):  
Silicon Surfaces ◽  
Thermally Grown Oxides ◽  
Thermally Grown

Influence of bond coat thickness on the cyclic rumpling of thermally grown oxides

2006 ◽  
Vol 54 (7) ◽  
pp. 1815-1820 ◽  
Author(s):  
D.S. Balint ◽  
T. Xu ◽  
J.W. Hutchinson ◽  
A.G. Evans
Keyword(s):  
Bond Coat ◽  
Thermally Grown Oxides ◽  
Thermally Grown
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