Room temperature CW Operation of a GaInAs/GaInAsP/InP SCH Laser with Quantum-Wire Size Active Region

2005 ◽  
Author(s):  
Y. Miyake ◽  
H. Hirayama ◽  
S. Tamura ◽  
J. Yoshida ◽  
S. Arai ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wire ◽  
Room Temperature ◽  
Cw Operation

Room-temperature operation of GaInAs/GaInAsP/InP SCH lasers with quantum-wire size active region

1993 ◽  
Vol 29 (6) ◽  
pp. 2123-2133 ◽  
Author(s):  
Y. Miyake ◽  
H. Hirayama ◽  
K. Kudo ◽  
S. Tamura ◽  
S. Arai ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wire ◽  
Room Temperature ◽  
Room Temperature Operation

Room temperature CW operation of Ga/sub 0.3/In/sub 0.7/As/GaInAsP/InP strained MQW lasers with wire active region

1992 ◽  
Vol 4 (10) ◽  
pp. 1089-1092 ◽  
Author(s):  
K. Kudo ◽  
Y. Miyake ◽  
H. Hirayama ◽  
S. Tamura ◽  
S. Arai ◽  
...  
Keyword(s):  
Active Region ◽  
Room Temperature ◽  
Cw Operation

High-Power CW Operation of GaInAsP/InP Superluminescent Light-Emitting Diode with Tapered Active Region

2001 ◽  
Vol 40 (Part 2, No. 7A) ◽  
pp. L678-L680 ◽  
Author(s):  
Takeshi Yamatoya ◽  
Shigeaki Sekiguchi ◽  
Fumio Koyama ◽  
Kenichi Iga
Keyword(s):  
Active Region ◽  
High Power ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Cw Operation

scholarly journals Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers

2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Crystal Defects ◽  
Blue Laser ◽  
Buffer Layers ◽  
Continuous Wave Laser ◽  
Cw Operation ◽  
First Time

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

scholarly journals Поверхностно-излучающий квантово-каскадный лазер с кольцевым резонатором

2021 ◽  
Vol 55 (7) ◽  
pp. 602
Author(s):  
А.В. Бабичев ◽  
Е.С. Колодезный ◽  
А.Г. Гладышев ◽  
Д.В. Денисов ◽  
Г.В. Вознюк ◽  
...  
Keyword(s):  
Active Region ◽  
Room Temperature ◽  
Ion Beam ◽  
Whispering Gallery Modes ◽  
Mode Spacing ◽  
Quantum Cascade ◽  
Surface Emission ◽  
Whispering Gallery ◽  
Ring Diameter ◽  
Solid Alloys

The results of studies of quantum-cascade laser with a surface emission through a grating formed in the layers of the top cladding of the waveguide by ion beam milling are presented. The active region of the QCL heterostructure was formed based on a heteropair of In0.53Ga0.47As / Al0.48In0.52As solid alloys with two-phonon resonance design. It is shown that lasing at room temperature close to 7.9 µm is demonstrated for a laser with a ring diameter of 191 µm. The mode spacing corresponds to whispering gallery modes.

1.3 µm CW Operation of GaInAsP/InP DH Diode Lasers at Room Temperature

1977 ◽  
Vol 16 (7) ◽  
pp. 1273-1274 ◽  
Author(s):  
Kunishige Oe ◽  
Seigo Ando ◽  
Koichi Sugiyama
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Cw Operation
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