A signal-processing CMOS image sensor using a simple analog operation

Author(s):  
Y. Muramatsu ◽  
S. Kurosawa ◽  
M. Furumiya ◽  
H. Ohkubo ◽  
Y. Nakashiba
2003 ◽  
Vol 38 (1) ◽  
pp. 101-106 ◽  
Author(s):  
Y. Muramatsu ◽  
S. Kurosawa ◽  
M. Furumiya ◽  
H. Ohkubo ◽  
Y. Nakashiba

2004 ◽  
Author(s):  
Tomoyasu Tate ◽  
Shigetoshi Sugawa ◽  
Koji Chiba ◽  
Koji Kotani ◽  
Tadahiro Ohmi

2005 ◽  
Vol 44 (4B) ◽  
pp. 2093-2098 ◽  
Author(s):  
Tomoyasu Tate ◽  
Shigetoshi Sugawa ◽  
Koji Chiba ◽  
Koji Kotani ◽  
Tadahiro Ohmi

2017 ◽  
Vol 137 (2) ◽  
pp. 48-58
Author(s):  
Noriyuki Fujimori ◽  
Takatoshi Igarashi ◽  
Takahiro Shimohata ◽  
Takuro Suyama ◽  
Kazuhiro Yoshida ◽  
...  

2020 ◽  
Vol 2020 (7) ◽  
pp. 143-1-143-6 ◽  
Author(s):  
Yasuyuki Fujihara ◽  
Maasa Murata ◽  
Shota Nakayama ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa

This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.


Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.


2014 ◽  
Vol 35 (3) ◽  
pp. 035005 ◽  
Author(s):  
Kaiming Nie ◽  
Suying Yao ◽  
Jiangtao Xu ◽  
Zhaorui Jiang

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