High Density Planes Deposition Kinetics and Facets Propagation in Silicon Selective Epitaxial Growth

2006 ◽  
Author(s):  
N. Loubet ◽  
A. Talbot ◽  
D. Dutartre ◽  
D. Dutartre
Keyword(s):  
Epitaxial Growth ◽  
High Density ◽  
Deposition Kinetics ◽  
Selective Epitaxial Growth

Buried Selective Growth of p-Doped SiC by VLS Epitaxy

2012 ◽  
Vol 717-720 ◽  
pp. 169-172 ◽  
Author(s):  
Davy Carole ◽  
Stéphane Berckmans ◽  
Arthur Vo-Ha ◽  
Mihai Lazar ◽  
Dominique Tournier ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Room Temperature ◽  
Selective Growth ◽  
Initial Amount ◽  
Deposition Kinetics ◽  
Selective Epitaxial Growth ◽  
P Type

Selective epitaxial growth in buried patterns was studied using the vapour-liquid-solid mechanism in Al-Si melt in order to obtain p+-doped SiC localized layers on 4H-SiC substrate. Homogeneous deposition with step bunched morphology was obtained by adding propane at room temperature before growth at 1100°C. Patterns as large as 800 µm and as narrow as 10 µm were completely filled in this way. The deposition kinetics demonstrates that the process is self limited and mainly depends on the initial amount of Si in the liquid. The deposit is highly p-type doped and the p-n junction is demonstrated.

Thick selective epitaxial growth of silicon at 960°C using silane only

1992 ◽  
Vol 18 (3) ◽  
pp. 237-246 ◽  
Author(s):  
N. Afshar-Hanaii ◽  
J.M. Bonar ◽  
A.G.R. Evans ◽  
G.J. Parker ◽  
C.M.K. Starbuck ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Selective Epitaxial Growth
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