Buried Selective Growth of p-Doped SiC by VLS Epitaxy

2012 ◽  
Vol 717-720 ◽  
pp. 169-172 ◽  
Author(s):  
Davy Carole ◽  
Stéphane Berckmans ◽  
Arthur Vo-Ha ◽  
Mihai Lazar ◽  
Dominique Tournier ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Room Temperature ◽  
Selective Growth ◽  
Initial Amount ◽  
Deposition Kinetics ◽  
Selective Epitaxial Growth ◽  
P Type

Selective epitaxial growth in buried patterns was studied using the vapour-liquid-solid mechanism in Al-Si melt in order to obtain p+-doped SiC localized layers on 4H-SiC substrate. Homogeneous deposition with step bunched morphology was obtained by adding propane at room temperature before growth at 1100°C. Patterns as large as 800 µm and as narrow as 10 µm were completely filled in this way. The deposition kinetics demonstrates that the process is self limited and mainly depends on the initial amount of Si in the liquid. The deposit is highly p-type doped and the p-n junction is demonstrated.

Characteristics of Trench-Refilled 4H-SiC P-N Junction Diodes Fabricated by Selective Epitaxial Growth

2005 ◽  
Vol 483-485 ◽  
pp. 159-162 ◽  
Author(s):  
Can Hua Li ◽  
Peter A. Losee ◽  
Joseph Seiler ◽  
T. Paul Chow ◽  
I. Bhat
Keyword(s):  
Epitaxial Growth ◽  
Leakage Current ◽  
Nitrogen Doping ◽  
Room Temperature ◽  
Optical Microscope ◽  
Dominant Mechanism ◽  
Selective Epitaxial Growth ◽  
Reverse Leakage Current ◽  
Current Voltage ◽  
P Type

Selective nitrogen doping of 4H-SiC by epitaxial growth using TaC as the high temperature mask has been demonstrated. Nomarski optical microscope and scanning electron microscope (SEM) were used to characterize selective growth of SiC. In addition, 250µm square shaped p-n junction diodes by selective n type epitaxial growth on p type epi layer were fabricated. The refilled fingers with different width were designed to vary the periphery/area (P/A) ratio. The effects of P/A ratio on the current-voltage (J-V) characteristics have been investigated. The ideality factor extracted from J-V characteristics is ≈2 at temperature range of 25-275°C, which indicates that the Shockley-Read-Hall recombination is the dominant mechanism in the conduction region. The reverse leakage current did not show dependence on P/A ratio for trench refilled diodes. The room temperature reverse leakage current density at 100V is less than 3.5×10-7 A/cm2 for all diodes. Also, the reverse leakage current did not increase significantly with temperature up to 275°C. The breakdown voltages measured at room temperature are about 450V and 400V for diodes without and with fingers, respectively.

scholarly journals P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth

2005 ◽  
pp. 633-636
Author(s):  
Mihai Lazar ◽  
Christophe Jacquier ◽  
Christiane Dubois ◽  
Christophe Raynaud ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Selective Epitaxial Growth ◽  
P Type

A Comparison of Arsine and Tertiarybutylarsine as Precursors for the Selective Epitaxial Growth of GaAs and AlGaAs

1990 ◽  
Vol 204 ◽  
Author(s):  
F.T.J. Smith
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Polycrystalline Material ◽  
Low Pressure ◽  
Selective Growth ◽  
Group V ◽  
Selective Epitaxial Growth ◽  
Crystal Material ◽  
Gaas Substrates ◽  
Increasing Temperature

ABSTRACTWe have investigated the use of tertiarybutylarsine (tBAs) as an As source in the surface-selective growth of GaAs and AlGaAs by low-pressure OMVPE. Deposition was carried out onto GaAs substrates partly masked with SiNx. Triethylgallium (TEGa) and trimethylaluminum (TMAl) were used as precursors along with either arsine or tBAs. Growth pressures were in the range 0.3 to 3.0 Torr. The usual trends of decreasing deposition on the mask with increasing temperature, decreasing group V/III ratio, and decreasing pressure were observed. At very low group V/III ratios, for either As precursor, single crystal material with a pitted surface was obtained. A reduction in the nucleation of polycrystalline material on the mask was observed when tBAs was used in place of AsH3.

New Approaches to In Situ Doping of SiC Epitaxial Layers

2011 ◽  
Vol 324 ◽  
pp. 14-19
Author(s):  
Gabriel Ferro
Keyword(s):  
Epitaxial Growth ◽  
Epitaxial Film ◽  
Liquid Droplets ◽  
Selective Epitaxial Growth ◽  
Vls Growth ◽  
Record Value ◽  
P Type ◽  
Original Approach ◽  
Very High

In this paper, the issues related to in-situ doping of silicon carbide (SiC) semiconductor during epitaxial growth are reviewed. Some of these issues can find solution by using an original approach called vapour-liquid-solid (VLS) mechanism. In this technique, the SiC seed is covered by a Sibased melt and is fed by propane in order to growth the epitaxial film. Using Al-Si melts and temperatures as low as 1100°C, very high p type doping was demonstrated, with a record value of 1.1021 at.cm-3. It leads to very low contact resistivity and even to metallic behaviour of the SiC deposit even at low temperature. Using Ge-Si melts, non intentionally low doped n type layers are grown. By forming Si-containing liquid droplets on a SiC seed, one can extrapolate this VLS growth to selective epitaxial growth (SEG). Such approach was successfully applied for both Al and Ge-based systems in order to form p+ and n doped areas respectively.

Solid-Phase Epitaxial Growth of A-Site-Ordered Perovskite Sr4−xErxCo4O12−δ: A Room Temperature Ferrimagnetic p-Type Semiconductor

2015 ◽  
Vol 1 (12) ◽  
pp. 1500199 ◽  
Author(s):  
Takayoshi Katase ◽  
Hidefumi Takahashi ◽  
Tetsuya Tohei ◽  
Yuki Suzuki ◽  
Michihiko Yamanouchi ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Room Temperature ◽  
Solid Phase ◽  
Type Semiconductor ◽  
A Site ◽  
P Type

scholarly journals P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth

2005 ◽  
Vol 483-485 ◽  
pp. 633-636 ◽  
Author(s):  
Mihai Lazar ◽  
Christophe Jacquier ◽  
Christiane Dubois ◽  
Christophe Raynaud ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Sheet Resistance ◽  
Doping Concentration ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Substrate Interface ◽  
Selective Epitaxial Growth ◽  
High Doping Concentration ◽  
P Type

Al-Si patterns were formed on n-type 4H-SiC substrate by a photolithographic process including wet Al etching and Si/SiC reactive ion etching (RIE) process. RF 1000°C annealing under C3H8 flow was performed to obtain p+ SiC layers by a Vapour-Liquid-Solid (VLS) process. This method enables to grow layers with different width (up to 800 µm) and various shapes. Nevertheless the remaining Al-based droplets on the largest patterns are indicators of crack defects, going through the p+ layer down to the substrate. SIMS analyses have shown an Al profile with high doping concentration near the surface, high N compensation and Si/C stoechiometry variation between the substrate and the VLS layer. The hydrogen profile follows the Al profile in the VLS layer with an overshoot at the VLS/substrate interface. I-V measurements performed directly on the semiconductor layers have confirmed the formed p-n junction and allowed to measure a sheet resistance of 5.5 kW/ı

Reduction of Base Access Resistance in AlGaN/GaN Heterojunction Bipolar Transistors using GaInN Base Cap Layer and Selective Epitaxial Growth

2005 ◽  
Vol 892 ◽  
Author(s):  
Jay M Shah ◽  
Thomas Gessmann ◽  
Hong Luo ◽  
Yangang Xi ◽  
Kaixuan Chen ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Epitaxial Growth ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Selective Epitaxial Growth ◽  
Offset Voltage ◽  
Specific Contact ◽  
Access Resistance ◽  
P Type

AbstractOne of the major challenges affecting the performance of Npn AlGaN/GaN heterojunction bipolar transistors (HBTs) is the high base access resistance, which is comprised of the base contact resistance and the base bulk resistance. A novel concept is proposed to reduce the base access resistance in Npn AlGaN/GaN HBTs by employing polarization-enhanced contacts and selective epitaxial growth of the base and emitter. In addition, this technique reduces the exposed base surface area, which results in a lower surface recombination current. Such a structure would enable better performance of AlGaN/GaN HBTs in terms of higher current gain and a lower offset voltage. Theoretical calculations on polarization-enhanced contacts predict p-type specific contact resistance lower than 10-5 Ωcm2. Experimental results using transmission line measurement (TLM) technique yield specific contact resistances of 5.6×10-4 Ωcm2 for polarization-enhanced p-type contacts and 7.8×10-2 Ωcm2 for conventional p-type contacts.

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