Formation of ITO Thin Films by MF Magnetron Sputtering for Solar Cells Application

Author(s):  
Evgeniy Goncharov ◽  
Aleksandr Sayenko ◽  
Sergey Malyukov ◽  
Aleksandr Palii
2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Chuan Lung Chuang ◽  
Ming Wei Chang ◽  
Nien Po Chen ◽  
Chung Chiang Pan ◽  
Chung Ping Liu

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.


2014 ◽  
Vol 601 (1) ◽  
pp. 57-63 ◽  
Author(s):  
Kyong Chan Heo ◽  
Phil Kook Son ◽  
Youngku Sohn ◽  
Jonghoon Yi ◽  
Jin Hyuk Kwon ◽  
...  

2018 ◽  
Vol 39 (11) ◽  
pp. 1557-1564
Author(s):  
徐 信 XU Xin ◽  
王书荣 WANG Shu-rong ◽  
陆熠磊 LU Yi-lei ◽  
杨 帅 YANG Shuai ◽  
李耀斌 LI Yao-bin ◽  
...  

2007 ◽  
Vol 470 (1) ◽  
pp. 251-257 ◽  
Author(s):  
Myung Chan Kim ◽  
Sang Ho Sohn ◽  
Duck Kyu Park ◽  
Sang Kooun Jung ◽  
Eun Lyoung Kim ◽  
...  

2013 ◽  
Vol 678 ◽  
pp. 365-368
Author(s):  
Rangasamy Balasundraprabhu ◽  
E.V. Monakhov ◽  
N. Muthukumarasamy ◽  
B.G. Svensson

Nanostructure ITO thin films have been deposited on well cleaned glass and silicon substrates using dc magnetron sputtering technique. The ITO films are post annealed in air using a normal heater setup in the temperature range 100 - 400 °C. The ITO film annealed at 300°C exhibited optimum transparency and resistivity values for device applications. The thickness of the ITO thin films is determined using DEKTAK stylus profilometer. The sheet resistance and resistivity of the ITO films were determined using four probe technique. Finally, the optimized nanostructure ITO layers are incorporated on silicon solar cells and the efficiency of the solar cell are found to be in the range 12-14%. Other solar cell parameters such as fill factor(FF), open circuit voltage(Voc),Short circuit current(Isc), series resistance(Rs) and shunt resistance(Rsh) have been determined. The effect of ITO film thickness on silicon solar cells is also observed.


2009 ◽  
Vol 499 (1) ◽  
pp. 178/[500]-184/[506]
Author(s):  
Jung Hyun Lee ◽  
Sang Ho Sohn ◽  
Ji Hyun Moon ◽  
Myung Sub Park ◽  
Sang Gul Lee

2009 ◽  
Vol 21 (5) ◽  
pp. 441-444 ◽  
Author(s):  
Shenghao Wang ◽  
Jingquan Zhang ◽  
Bo Wang ◽  
Lianghuan Feng ◽  
Yaping Cai ◽  
...  

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