ABSTRACTWe present simulations of field emission from carbon nanotubes, using a transfer-matrix methodology. By repeating periodically a basic unit of the nanotubes in the region preceding that containing the extraction field, specific band-structure effects are included in the distribution of incident states, i.e. those entering the field region. The structures considered are the metallic (5,5) and the semiconducting (10,0) single-wall carbon nanotubes. The total-energy distributions of incident states show the gap of the (10,0) and the expected flat region for the (5,5) nanotube. The field-emitted electron energy distributions contain peaks, which are sharper for the (10,0) structure. Except for peaks associated with van Hove singularities in the distribution of incident states or with the Fermi level in the case of a metallic structure, all peaks are shifted to lower energies by the electric field.
Carbon Nanotubes/Regenerated Silk Composite as a Three-Dimensional Printable Bio-Adhesive Ink with Self-Powering Properties
