Properties of tantalum silicate thin films prepared by metalorganic decomposition

The Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films were prepared by metalorganic decomposition method. The effect of grain size on the ferroelectric properties during crystallization were investigated by x-ray diffraction and field emission scanning electron microscope. The grain size and the roughness of BLT films increase with increasing of drying temperature. The leakage current densities of the BLT thin film with large grains are higher than that with small grains. The remanent polarization of BLT increase with increasing grain size. As compared BLT with small grain size, the BLT film with larger grain size shows better fatigue properties. This may be explained that small grained films shows more degradation of switching charge than large grained films.

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Structural and electrical properties of Sm-doped bismuth titanate thin films on Si (100) by metalorganic decomposition

Materials Letters ◽

10.1016/j.matlet.2004.05.024 ◽

2004 ◽

Vol 58 (24) ◽

pp. 2997-3000 ◽

Cited By ~ 4

Author(s):

W.L Liu ◽

H.R Xia ◽

H Han ◽

X.Q Wang

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Bismuth Titanate ◽

Structural And Electrical Properties ◽

Metalorganic Decomposition

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Structure control of ferroelectric PbTiO/sub 3/ thin films using SrTiO/sub 3/ buffer layer prepared by metalorganic decomposition

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. ◽

10.1109/isaf.2002.1195891 ◽

2003 ◽

Author(s):

H. Fukuda ◽

K. Kimura ◽

K.M.A. Salam ◽

S. Nomura

Keyword(s):

Thin Films ◽

Buffer Layer ◽

Structure Control ◽

Metalorganic Decomposition

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Retention Characteristic of Bi 3.25 La 0.75 Ti 3 O 12 Thin Films Prepared by Metalorganic Decomposition

Integrated Ferroelectrics ◽

10.1080/10584580215410 ◽

2002 ◽

Vol 47 (1) ◽

pp. 135-141 ◽

Cited By ~ 3

Author(s):

X. S. Zhang ◽

J. S. Zhu ◽

X. M. Lu ◽

Y. N. Wang

Keyword(s):

Thin Films ◽

Retention Characteristic ◽

Metalorganic Decomposition

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Influence of Ta content on the physical properties of SrBi2Ta2O9 ferroelectric thin films

Journal of Materials Research ◽

10.1557/jmr.2006.0383 ◽

2006 ◽

Vol 21 (12) ◽

pp. 3124-3133 ◽

Cited By ~ 1

Author(s):

Fan-Yi Hsu ◽

Ching-Chich Leu ◽

Chao-Hsin Chien ◽

Chen-Ti Hu

Keyword(s):

Thin Films ◽

Physical Properties ◽

Spin Coating ◽

Coercive Field ◽

Remanent Polarization ◽

Ferroelectric Properties ◽

Ferroelectric Thin Films ◽

Preferential Orientation ◽

Strontium Bismuth Tantalate ◽

Metalorganic Decomposition

We have investigated the effect that the Ta content has on the ferroelectric properties of strontium bismuth tantalate (SBT) thin films synthesized using metalorganic decomposition (MOD) and spin coating techniques. The physical properties of these SBT samples were strongly dependent upon the Ta ratio. Polarization measurements revealed that Ta-deficient SBT exhibited a relatively low coercive field (2Ec ∼ 87 kV/cm) and a high remanent polarization (2Pr ∼ 15 μC/cm2). The value of 2Pr decreased as the Ta ratio in SBT increased. The improved ferroelectric properties of the Ta-deficient SBT samples may have resulted from the uniformly well-grown bismuth-layered-structured (BLS) phases of the films and their highly preferential orientation along the a and b axes. We suggest that the incorporation of Ta vacancies plays an important role in enhancing the crystallinities and microstructures of Ta-deficient SBT films.

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Ferroelectric Characteristics of SrxBi2.4Ta2O9 Thin Films and Electrical Properties of the Pt/SrxBi2.4Ta2O9/TiO2/Si Structure

Materials Science Forum ◽

10.4028/www.scientific.net/msf.449-452.477 ◽

2004 ◽

Vol 449-452 ◽

pp. 477-480

Author(s):

J.H. Choi ◽

Tae Sung Oh

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Coercive Field ◽

Remanent Polarization ◽

Ferroelectric Properties ◽

Memory Window ◽

Low Leakage ◽

Low Leakage Current ◽

Metalorganic Decomposition ◽

Ferroelectric Hysteresis

Ferroelectric characteristics of the 400 nm-thick SrxBi2.4Ta2O9(0.7≤x≤1.3) thin films processed by metalorganic decomposition were investigated, and electrical properties of the Pt/Sr0.85Bi2.4Ta2O9/TiO2/Si structure prepared using TiO2 buffer layer were characterized. The Sr-deficient SrxBi2.4Ta2O9 films exhibited well-developed ferroelectric hysteresis curves compared to those of the Sr-excess films. The Sr0.85Bi2.4Ta2O9 film exhibited optimum ferroelectric properties, such as high remanent polarization and low leakage current density, among SrxBi2.4Ta2O9 films. A memory window of the Pt/SrxBi2.4Ta2O9/TiO2/Si structure was dependent upon the coercive field of the SrxBi2.4Ta2O9 film, and the Pt/SrxBi2.4Ta2O9/TiO2/Si exhibited a maximum memory window of 1.3 V at the sweeping voltage of ±5 V.

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Dielectric properties of Mg-doped Ba0.96Ca0.04Ti0.84Zr0.16O3 thin films fabricated by metalorganic decomposition method

Applied Physics Letters ◽

10.1063/1.1375002 ◽

2001 ◽

Vol 78 (22) ◽

pp. 3517-3519 ◽

Cited By ~ 30

Author(s):

Woo-Chul Yi ◽

T. S. Kalkur ◽

Elliott Philofsky ◽

Lee Kammerdiner ◽

Anthony A. Rywak

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Decomposition Method ◽

Metalorganic Decomposition ◽

Mg Doped

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Electrical conduction behavior of ferroelectric Bi3.25La0.75Ti3O12 thin films prepared by a metalorganic decomposition method

Surface and Coatings Technology ◽

10.1016/s0257-8972(03)00910-1 ◽

2003 ◽

Author(s):

K Kim

Keyword(s):

Thin Films ◽

Electrical Conduction ◽

Decomposition Method ◽

Conduction Behavior ◽

Metalorganic Decomposition

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Investigation of Structure Development in Mod Pb(ZrxTi1-x)O3 Films by an Optical Method

MRS Proceedings ◽

10.1557/proc-243-335 ◽

1991 ◽

Vol 243 ◽

Cited By ~ 8

Author(s):

Chien H. Peng ◽

Seshu B. Desu

Keyword(s):

Thin Films ◽

Low Temperatures ◽

Optical Method ◽

Transformation Kinetics ◽

X Ray Diffraction ◽

Structure Development ◽

X Ray ◽

Pzt Films ◽

Metalorganic Decomposition ◽

Ray Methods

AbstractFor i roving the metalorganic decomposition (MOD) process, such that perovskite Pb(ZrxTi1-x)O3 thin films can be fabricated at low temperatures, understanding of structure development is required. Here we report a nondestructive optical method for investigating the structure development in MOD PZT films. Using this method we have identified the temperatures at which the formation of both pyrochlore and perovskite was completed as a function of Zr/Ti ratio. Also for PZT solid solutions, we have identified the temperatures at which the initial presence of both pyrochlore and perovskite was observed. These temperatures compare very well with those obtained from the X-ray diffraction studies. In contrast to X-ray methods, the proposed technique can also be effectively utilized for studying the pyrochlore formation from the amorphous phase. Furthermore, it was also shown that the optical method can be used for characterizing the phase transformation kinetics in PZT films.

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