Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)
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Further EOT scaling of Ge/HfO2 over Si/HfO2 MOS systems

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159209 ◽

2003 ◽

Author(s):

K. Kita ◽

M. Sasagawa ◽

K. Tomida ◽

M. Tohyama ◽

K. Kyuno ◽

...

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Ru gate electrode for a La-oxide gate insulator deposited by metalorganic chemical vapor deposition

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159191 ◽

2003 ◽

Author(s):

T. Shimizu ◽

K. Ishii ◽

E. Suzuki

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Gate Insulator ◽

Gate Electrode ◽

Metalorganic Chemical

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EOT scaling and device issues for high-k gate dielectrics

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159206 ◽

2003 ◽

Author(s):

M.I. Gardner ◽

S. Gopalan ◽

J. Gutt ◽

J. Peterson ◽

Hong-Jyh Li ◽

...

Keyword(s):

Gate Dielectrics ◽

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Method of increasing gate nitridation and its impact on CMOS devices

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159182 ◽

2003 ◽

Author(s):

V.P. Gopinath ◽

V. Hornback ◽

Y. Le ◽

A. Kamath ◽

L. Duong ◽

...

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Extending the life of N/O stack gate dielectric with gate electrode engineering

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159200 ◽

2003 ◽

Author(s):

Qi Xiang ◽

Z. Krivokapic ◽

W. Maszara ◽

Ming-Ren Lin

Keyword(s):

Gate Dielectric ◽

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Vapor-liquid hybrid deposition (VALID) of hafnium silicate films using Hf(O/sup t/C4H/sub 9/)4 and Si(OC2H5)4 precursors

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159175 ◽

2003 ◽

Author(s):

Y. Xuan ◽

T. Yasuda

Keyword(s):

Hafnium Silicate ◽

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Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159197 ◽

2003 ◽

Author(s):

A. Uedono ◽

R. Mitsuhashi ◽

A. Horiuchi ◽

K. Torii ◽

K. Yamabe ◽

...

Keyword(s):

Positron Annihilation ◽

Gate Dielectric ◽

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Properties of tantalum silicate thin films prepared by metalorganic decomposition

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159194 ◽

2003 ◽

Author(s):

K.M.A. Salam ◽

H. Saito ◽

H. Fukuda

Keyword(s):

Metalorganic Decomposition

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Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159183 ◽

2003 ◽

Author(s):

Ching-Wei Chen ◽

Chao-Hsin Chien ◽

Shih-Chich Ou ◽

Tsu-Hsiu Perng ◽

Da-Yuan Lee ◽

...

Keyword(s):

Gate Dielectric

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Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159203 ◽

2003 ◽

Author(s):

R. Mitsuhashi ◽

A. Horiuchi ◽

A. Uedono ◽

K. Torii

Keyword(s):

Thermal Stability ◽

Interfacial Layer ◽

Gate Stacks ◽

Thermal Stability Of

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