EFFECT OF GRAIN SIZE ON THE FERROELECTRIC PROPERTIES OF Bi3.25La0.75Ti3O12 Thin Films

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4469-4474 ◽  
Author(s):  
KYOUNG-TAE KIM ◽  
CHANG-IL KIM ◽  
DONG-HEE KANG ◽  
IL-WUN SHIM
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Fatigue Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Densities ◽  
Metalorganic Decomposition ◽  
Small Grains

The Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films were prepared by metalorganic decomposition method. The effect of grain size on the ferroelectric properties during crystallization were investigated by x-ray diffraction and field emission scanning electron microscope. The grain size and the roughness of BLT films increase with increasing of drying temperature. The leakage current densities of the BLT thin film with large grains are higher than that with small grains. The remanent polarization of BLT increase with increasing grain size. As compared BLT with small grain size, the BLT film with larger grain size shows better fatigue properties. This may be explained that small grained films shows more degradation of switching charge than large grained films.

Preparation and Properties of Barium Incorporated Strontium Bismuth Tantalate Ferroelectric Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
Chung-Hsin Lu ◽  
Cheng-Yen Wen
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Barium Ions ◽  
X Ray ◽  
Diffraction Peaks ◽  
Metalorganic Decomposition ◽  
Strontium Ions

AbstractSrBi2Ta2O9thin films doped with barium ions were studied, in which Ba/(Sr+Ba) = 0.3 and 0.5, meanwhile the content of (Sr+Ba) remains unity to keep the stoichiometry of SrBi2Ta2O9. Films were deposited using metalorganic decomposition method with spin-on coating. Crystallinity, surface morphology, and ferroelectric properties of prepared thin films were investigated. From X-ray diffraction (XRD) analysis, barium ions substituted strontium ions in the SrBi2Ta2O9 lattice. Shift of diffraction peaks was observed, indicating a slight distortion of the lattice while barium ions incorporated into. The observation of prepared films indicated that the grain size of films annealed at 750 °C was about 0.7∼0.8 μm. Such barium incorporated SrBi2Ta2O9 thin films exhibited higher remanent polarization than the intrinsic SrBi2Ta2O9thin films.

Preparation and Electrical Properties of Bi0.9Nd0.1Fe0.925Mn0.075O3 Thin Films

2012 ◽  
Vol 557-559 ◽  
pp. 1933-1936
Author(s):  
Ning Yan ◽  
Sheng Hong Yang ◽  
Yue Li Zhang
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Low Leakage ◽  
Bifeo3 Thin Films ◽  
Low Leakage Current

Pure BiFeO3(BFO) and Bi0.9Nd0.1Fe0.925Mn0.075O3(BNFM) thin films were deposited on Pt(111)/Ti/SiO2/Si substrate by sol-gel method. X-ray diffraction analysis showed that all the films were single perovskite structure and a phase transition appeared in Nd–Mn codoped BiFeO3 thin films. Electrical measurements indicated that the ferroelectric properties of BFO thin films were significantly improved by Nd and Mn codoping. BNFM films exhibit a low leakage current and a good P-E hysteresis loop. The remanent polarization (Pr) value of 74μC/cm2has been obtained in BNFM films, while the coercive field (Ec) is 184kV/cm.

The Influence of the Crystalline Structure on the Electrical Properties of BaTiO3/SrRuO, Heterostructures

1994 ◽  
Vol 361 ◽  
Author(s):  
L.A. Wills ◽  
Jun Amano
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Crystalline Structure ◽  
Remanent Polarization ◽  
Rf Magnetron Sputtering ◽  
Processing Parameters ◽  
Layer Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Densities

ABSTRACTEpitaxial BaTiO3/SrRuO3 heterostructures were deposited on MgO and SrTiO3 substrates by 90° off-axis, rf-magnetron sputtering. A template layer growth was required to obtain epitaxy on MgO. The crystalline structure of the films was analyzed with x-ray diffraction. The leakage current and remanent polarization depended on the crystalline structure and processing parameters. The BaTiO3 thin films displayed remanent polarizations of 13 μC/cm2 and leakage current densities of 107 Amps/cm2 at 2 volts. The BaTiO3 thin films grown under optimal conditions displayed very little fatigue up to 5×108 cycles.

Electrical Characteristics in Transparent (Bi3.25Nd0.75)(Ti2.9V0.1)O12 Ferroelectric Thin Films

2014 ◽  
Vol 602-603 ◽  
pp. 777-780
Author(s):  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Film ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Thin Films ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Film Capacitor ◽  
X Ray

In this study, we investigated the structure and ferroelectric properties of the as-deposited (Bi3.25Nd0.75)(Ti2.9V0.1)O12ferroelectric thin films on ITO substrate fabricated by rf magnetron sputtering method. The electrical, ferroelectric and physical characteristics of as-deposited (Bi3.25Nd0.75)(Ti2.9V0.1)O12thin films were developed under different conditions to find the optimal deposited parameters. The crystalline structure of the prepared (Bi3.25Nd0.75)(Ti2.9V0.1)O12thin films was analyzed by X-ray diffraction (XRD). Field emission scanning electron microscopy (FESEM) was used to observe the film thickness and the surface morphology including grain size and porosity. Additionally, the remnant polarization of the as-deposited ferroelectric thin films was improved by neodymium and vanadium elements doped in this study. The remanent polarization of as-deposited ferroelectric thin films was 11 μC/cm2as the measured frequency of 1kHz. Finally, the polarization of as-deposited ferroelectric thin film capacitor was decreased by 9% after the fatigue test with 109switching cycles.

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

TEM Study of FePt and FePt:C/FePt Composite Double-Layered Thin Films

2013 ◽  
Vol 275-277 ◽  
pp. 1952-1955
Author(s):  
Ling Fang Jin ◽  
Xing Zhong Li
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Grain Size ◽  
Magnetic Properties ◽  
Composite Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

New functional nanocomposite FePt:C thin films with FePt underlayers were synthesized by noneptaxial growth. The effect of the FePt layer on the ordering, orientation and magnetic properties of the composite layer has been investigated by adjusting FePt underlayer thickness from 2 nm to 14 nm. Transmission electron microscopy (TEM), together with x-ray diffraction (XRD), has been used to check the growth of the double-layered films and to study the microstructure, including the grain size, shape, orientation and distribution. XRD scans reveal that the orientation of the films was dependent on FePt underlayer thickness. In this paper, the TEM studies of both single-layered nonepitaxially grown FePt and FePt:C composite L10 phase and double-layered deposition FePt:C/FePt are presented.

X-ray Line Broadening Analysis of Tl-Superconducting Films

1989 ◽  
Vol 33 ◽  
pp. 145-151
Author(s):  
M. O. Eatough ◽  
D. S. Ginley ◽  
B. Morosin
Keyword(s):  
Thin Films ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Superconducting Thin Films ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Densities ◽  
Diffraction Peaks ◽  
Sequential Electron

AbstractSuperconducting thin films (0.3-0.7μm) in the TI-Ca-Ba-Cu-0 system have been prepared on various single crystal substrates by sequential electron beam evaporation followed by appropriate sintering and annealing. Oxygen-annealed films show Tc as high as 110K and critical current densities to 600,000 A/cm2. X-ray diffraction analyses of these films show predominantly the Tl2Ca2Ba2Cu2O10 phase (c-parameter near 36Å), but some also contain up to 50 at% of the Tl2CaBa2Cu2O8 phase (c-parameter near 30Å). The complete absence of hkl reflections other than 00I demonstrates the highly oriented nature of the films as well as the absence of other Tl phases. The diffraction peaks are noticeably broader for the 36Å phase than for the 30Å phase. For a 0.7μm film such broadening is consistent with coherent sizes along the c-axis of 1200 - 1400Å and 500Å, respectively, for the 30Å and 36Å phases, and of strain values near 1.4-1.8 x 10-3 for both phases.

0.75SrBi2Ta2O9-0.25Bi3TiTaO9 Layered Structural Thin Films: Microstructure and Ferroelectric Properties

2008 ◽  
Vol 368-372 ◽  
pp. 1814-1816
Author(s):  
Dan Xie ◽  
Zhi Gang Zhang ◽  
Tian Ling Ren ◽  
Li Tian Liu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Grain Size ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Significant Enhancement ◽  
Solution Deposition ◽  
Annealing Temperatures

{0.75SrBi2Ta2O9-0.25Bi3TiTaO9}(SBT-BTT) thin films were prepared by the modified metalorganic solution deposition (MOSD) technique. The microstructure and ferroelectric properties of SBTBTT thin films were studied. The SBT-BTT thin films were produced at 750°C. The grain size and surface roughness of SBT-BTT films showed significant enhancement with an increase in annealing temperatures. It is found that SBT-BTT thin films have good ferroelectric properties. The measured remanent polarization values for SBT-BTT, SBT and BTT capacitors were 15, 7.5 and 4.8μC/cm2, respectively. The coercive field for SBT-BTT capacitors was 50kV/cm. More importantly, the polarization of SBT-BTT capacitors only decreased 5% after 1011 switching cycles at a frequency of 1MHz.

Effect of electron irradiation on the Crystallite size, Grain size and Contact angle of electrodeposited Cadmium Telluride thin films

2015 ◽  
Vol 8 (2) ◽  
Author(s):  
S. A. Gangawane ◽  
V. P. Malekar ◽  
V. J. Fulari
Keyword(s):  
Thin Films ◽  
Contact Angle ◽  
Grain Size ◽  
Electron Beam Irradiation ◽  
Crystal Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Angle Measurements ◽  
Contact Angle Measurements ◽  
Cdte Thin Films

In this paper, the effects of electron beam irradiation on the CdTe thin films are studied. The CdTe thin films are characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and contact angle measurements for different bath concentration. The thin film layers are subjected to irradiation of 6 MeV electrons. Finally the effect of irradiation is correlated to crystal size, grain size and contact angle measurements of the CdTe thin films

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