Abridgment of high-voltage gaseous-conductor lamps: Electrical characteristics of the high-voltage neon type

1928 ◽  
Vol 47 (12) ◽  
pp. 901-904
Author(s):  
F. O. McMillan ◽  
E. C. Starr
Keyword(s):  
High Voltage ◽  
Electrical Characteristics

Simulation of the electrical characteristics of high-voltage mesa and planar GaN Schottky and p-i-n rectifiers

2001 ◽  
Vol 48 (8) ◽  
pp. 1498-1502 ◽  
Author(s):  
B.S. Shelton ◽  
Ting Gang Zhu ◽  
D.J.H. Lambert ◽  
R.D. Dupuis
Keyword(s):  
High Voltage ◽  
Electrical Characteristics

Influence of compaction manufacturing process on the physical and electrical characteristics of high-voltage varistor

2007 ◽  
Vol 18 (9) ◽  
pp. 957-962 ◽  
Author(s):  
José M. Cavenaghi ◽  
André L. Molisani ◽  
Humberto N. Yoshimura ◽  
Vânia Caldas De Sousa
Keyword(s):  
High Voltage ◽  
Manufacturing Process ◽  
Electrical Characteristics

Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates

2005 ◽  
Vol 483-485 ◽  
pp. 97-100 ◽  
Author(s):  
Hidekazu Tsuchida ◽  
Toshiyuki Miyanagi ◽  
Isaho Kamata ◽  
Tomonori Nakamura ◽  
Kunikaza Izumi ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
High Voltage ◽  
Basal Plane ◽  
Substrate Surface ◽  
Low Density ◽  
Electrical Characteristics

In this paper, we investigated the density of basal plane dislocations (BPDs) in 4H-SiC epilayers grown on (0001) and (000-1). Re-polishing of the substrate surface, in-situ H2 etching and off-cut angle were found to influence the propagation of BPDs into the epilayers. The epitaxial growth on (000-1) substrates yields a relatively low density of BPDs compared to growth on (0001). The electrical characteristics of pn diodes were also investigated, and the suppressed forward degradation and high-voltage blocking performance were obtained in the use of the (000-1) epilayers.

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