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Advanced Semiconductor Devices
Latest Publications
TOTAL DOCUMENTS
30
(FIVE YEARS 0)
H-INDEX
1
(FIVE YEARS 0)
Published By WORLD SCIENTIFIC
9789812708588, 9789812770332
Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
Related Keywords
Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
Related Keywords
HIGH PERFORMANCE SIGEC/SI NEAR-IR ELECTROOPTIC MODULATORS AND PHOTODETECTORS
Advanced Semiconductor Devices
◽
10.1142/9789812770332_0024
◽
2007
◽
Author(s):
MARTIN SCHUBERT
◽
FARHAN RANA
Keyword(s):
High Performance
◽
Near Ir
◽
Electrooptic Modulators
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TERAHERTZ EMISSION FROM ELECTRICALLY PUMPED SILICON GERMANIUM INTERSUBBAND DEVICES
Advanced Semiconductor Devices
◽
10.1142/9789812770332_0019
◽
2007
◽
Author(s):
N. Sustersic
◽
S. Kim
◽
P. -C. Lv
◽
M. Coppinger
◽
T. Troeger
◽
...
Keyword(s):
Silicon Germanium
◽
Terahertz Emission
◽
Electrically Pumped
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TEMPERATURE-DEPENDENT MICROWAVE PERFORMANCE OF SB-HETEROSTRUCTURE BACKWARD DIODES FOR MILLIMETER-WAVE DETECTION
Advanced Semiconductor Devices
◽
10.1142/9789812770332_0017
◽
2007
◽
Author(s):
N. SU
◽
Z. ZHANG
◽
P. FAY
◽
H. P. MOYER
◽
R. D. RAJAVEL
◽
...
Keyword(s):
Millimeter Wave
◽
Temperature Dependent
◽
Wave Detection
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FOCUSED THERMAL BEAM DIRECT PATTERNING ON INGAN DURING MOLECULAR BEAM EPITAXY
Advanced Semiconductor Devices
◽
10.1142/9789812770332_0016
◽
2007
◽
Author(s):
XIAODONG CHEN
◽
WILLIAM J. SCHAFF
◽
LESTER F. EASTMAN
Keyword(s):
Molecular Beam Epitaxy
◽
Molecular Beam
◽
Direct Patterning
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4H-SIC VERTICAL RESURF SCHOTTKY RECTIFIERS AND MOSFETS
Advanced Semiconductor Devices
◽
10.1142/9789812770332_0011
◽
2007
◽
Author(s):
Y. Wang
◽
P. A. Losee
◽
T. P. Chow
Keyword(s):
Schottky Rectifiers
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ELECTRICAL CHARACTERISTICS AND CARRIER LIFETIME MEASUREMENTS IN HIGH VOLTAGE 4H-SIC PIN DIODES
Advanced Semiconductor Devices
◽
10.1142/9789812770332_0009
◽
2007
◽
Author(s):
P. A. Losee
◽
C. Li
◽
R. J. Kumar
◽
T. P. Chow
◽
I. B. Bhat
◽
...
Keyword(s):
High Voltage
◽
Carrier Lifetime
◽
Electrical Characteristics
◽
Pin Diodes
◽
Lifetime Measurements
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SELF-INDUCED SURFACE TEXTURING OF AL2O3 BY MEANS OF INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING IN CL2 CHEMISTRY
Advanced Semiconductor Devices
◽
10.1142/9789812770332_0007
◽
2007
◽
Author(s):
PAOLO BATONI
◽
EDWARD B. STOKES
◽
TRUSHANT K. SHAH
◽
MICHAEL D. HODGE
◽
THOMAS J. SULESKI
Keyword(s):
Inductively Coupled Plasma
◽
Reactive Ion Etching
◽
Surface Texturing
◽
Ion Etching
◽
Inductively Coupled
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LOW TEMPERATURE ELECTROLUMINESCENCE OF GREEN AND DEEP GREEN GaInN/GaN LIGHT EMITTING DIODES
Advanced Semiconductor Devices
◽
10.1142/9789812770332_0005
◽
2007
◽
Cited By ~ 1
Author(s):
Y. Li
◽
W. Zhao
◽
Y. Xia
◽
M. Zhu
◽
J. Senawiratne
◽
...
Keyword(s):
Low Temperature
◽
Light Emitting Diodes
◽
Light Emitting
◽
Deep Green
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SIMULATIONS OF FIELD-PLATED AND RECESSED GATE GALLIUM NITRIDE-BASED HETEROJUNCTION FIELD-EFFECT TRANSISTORS
Advanced Semiconductor Devices
◽
10.1142/9789812770332_0004
◽
2007
◽
Author(s):
Valentin O. Turin
◽
Michael S. Shur
◽
Dmitry B. Veksler
Keyword(s):
Gallium Nitride
◽
Field Effect
◽
Field Effect Transistors
◽
Heterojunction Field Effect Transistors
◽
Recessed Gate
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Drift velocity limitation in GaN HEMT channels
Advanced Semiconductor Devices
◽
10.1142/9789812770332_0003
◽
2007
◽
Author(s):
ARVYDAS MATULIONIS
Keyword(s):
Drift Velocity
◽
Gan Hemt
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