Real-Time External Compensation of Threshold Voltage Shift Using Double-Gate Oxide TFTs in a Gate Driving System

2016 ◽  
Vol 12 (9) ◽  
pp. 892-897 ◽  
Author(s):  
Bong-Hyun You ◽  
Soo-Yeon Lee ◽  
Seok-Ha Hong ◽  
Jae-Hoon Lee ◽  
Hyun-Chang Kim ◽  
...  
Keyword(s):  
Real Time ◽  
Threshold Voltage ◽  
Gate Oxide ◽  
Double Gate ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Driving System ◽  
Oxide Tfts ◽  
Gate Driving

Impact of Carbon on Threshold Voltage Shift in MOSFET Studied by 3D Atom Probe Tomography

2017 ◽  
Author(s):  
Ju-Heon Kim ◽  
Euna Ok ◽  
Hyunmi Sim ◽  
Dongkeun Na ◽  
Ho Seok Song ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Atom Probe Tomography ◽  
Analytical Techniques ◽  
Gate Oxide ◽  
Atom Probe ◽  
Single Atom ◽  
Device Performance ◽  
Si Substrate ◽  
Threshold Voltage Shift ◽  
Voltage Shift

Abstract In this paper, impact of carbon on threshold voltage in MOSFET-based device is studied by 3D-atom probe tomography (APT). Carbon is one of most difficult contaminants incorporated from fab-environment to be detected by typical analytical techniques such as TEM-EDS or SIMS. Here, we successfully demonstrated the detection of carbon segregated at gate oxide/Si substrate interface using 3D-APT with single-atom sensitivity and sub-nanometer spatial resolution. It was found that the carbon contaminants have significant effect on the threshold voltage shift (ΔVth), in which ΔVth increases slightly with increasing carbon concentration. The deterioration of device performance is explained by means of which the positively ionized carbons at the interface acting as additional positive charges affecting the inversion to n-channel.

P-28: The Effect of AC Bias Frequency on Threshold Voltage Shift of the Amorphous Oxide TFTs

2011 ◽  
Vol 42 (1) ◽  
pp. 1195-1197 ◽  
Author(s):  
Sun-Jae Kim ◽  
Young-Wook Lee ◽  
Soo-Yeon Lee ◽  
Jong-Suk Woo ◽  
Jang-Yeon Kwon ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Threshold Voltage Shift ◽  
Amorphous Oxide ◽  
Voltage Shift ◽  
Oxide Tfts

Effect of gate oxide process at SiC-MOS interface on threshold voltage shift analyzed by DLTS

2014 ◽  
Author(s):  
J. Hasegawa ◽  
M. Noguchi ◽  
M. Furuhashi ◽  
S. Nakata ◽  
T. Iwasaki ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Oxide ◽  
Threshold Voltage Shift ◽  
Voltage Shift

Robust low power DC-type shift register circuit capable of compensating threshold voltage shift of oxide TFTs

Displays ◽  
2017 ◽  
Vol 49 ◽  
pp. 65-71 ◽  
Author(s):  
Jeongrim Seo ◽  
Seok-Jeong Song ◽  
Dowon Kim ◽  
Hyoungsik Nam
Keyword(s):  
Low Power ◽  
Threshold Voltage ◽  
Shift Register ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Type Shift ◽  
Oxide Tfts
Sign in / Sign up

Export Citation Format

Share Document