P-201L: Late-News Poster: Threshold Voltage Shift under Bias Temperature Stress of Amorphous Indium Gallium Zinc Oxide TFTs

2010 ◽  
Vol 41 (1) ◽  
pp. 1373 ◽  
Author(s):  
Dae-Hwan Kim ◽  
Hoon Vim ◽  
Seung-Min Lee ◽  
Sung Ki Kim ◽  
Kwon-Shik Park ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Temperature Stress ◽  
Threshold Voltage ◽  
Indium Gallium Zinc Oxide ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Indium Gallium ◽  
Bias Temperature Stress ◽  
Late News ◽  
Oxide Tfts

Characterization of Threshold Voltage Shift by Negative Bias Temperature Stress in HfSiOx Films

2019 ◽  
Vol 19 (2) ◽  
pp. 393-402
Author(s):  
Chihiro Tamura ◽  
Tomohiro Hayashi ◽  
Yuuki Kikuchi ◽  
Kenji Ohmori ◽  
Ryu Hasunuma ◽  
...  
Keyword(s):  
Temperature Stress ◽  
Threshold Voltage ◽  
Negative Bias ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Bias Temperature Stress

Real-Time External Compensation of Threshold Voltage Shift Using Double-Gate Oxide TFTs in a Gate Driving System

2016 ◽  
Vol 12 (9) ◽  
pp. 892-897 ◽  
Author(s):  
Bong-Hyun You ◽  
Soo-Yeon Lee ◽  
Seok-Ha Hong ◽  
Jae-Hoon Lee ◽  
Hyun-Chang Kim ◽  
...  
Keyword(s):  
Real Time ◽  
Threshold Voltage ◽  
Gate Oxide ◽  
Double Gate ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Driving System ◽  
Oxide Tfts ◽  
Gate Driving

1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operation

2014 ◽  
Vol 778-780 ◽  
pp. 903-906 ◽  
Author(s):  
Kevin Matocha ◽  
Kiran Chatty ◽  
Sujit Banerjee ◽  
Larry B. Rowland
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
High Temperatures ◽  
Threshold Voltage ◽  
Room Temperature ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Device Reliability ◽  
Bias Temperature Stress ◽  
High Temperature Operation

We report a 1700V, 5.5mΩ-cm24H-SiC DMOSFET capable of 225°C operation. The specific on-resistance of the DMOSFET designed for 1200V applications is 8.8mΩ-cm2at 225°C, an increase of only 60% compared to the room temperature value. The low specific on-resistance at high temperatures enables a smaller die size for high temperature operation. Under a negative gate bias temperature stress (BTS) at VGS=-15 V at 225°C for 20 minutes, the devices show a threshold voltage shift of ΔVTH=-0.25 V demonstrating one of the key device reliability requirements for high temperature operation.

P-12: A Study on the Characteristics of Crystalline Indium-Gallium-Zinc-Oxide TFTs

2015 ◽  
Vol 46 (1) ◽  
pp. 1162-1165 ◽  
Author(s):  
Kyung Park ◽  
Hyun Soo Shin ◽  
Jonguk Bae ◽  
Jang-Yeon Kwon
Keyword(s):  
Zinc Oxide ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium ◽  
Oxide Tfts

Instability dependent upon bias and temperature stress in amorphous-indium gallium zinc oxide (a-IGZO) thin-film transistors

2010 ◽  
Vol 18 (1) ◽  
pp. 108 ◽  
Author(s):  
Kwang-Il Choi ◽  
Dong-Ho Nam ◽  
Jeong-Gyu Park ◽  
Sung-Su Park ◽  
Won-Ho Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Temperature Stress ◽  
Thin Film Transistors ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium
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