Capacitance Analysis of Transient Behaviour Improved Metal-Insulator-Semiconductor Tunnel Diodes with Ultra Thin Metal Surrounded Gate
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On the calculation of gate tunneling currents in ultra-thin metal–insulator–semiconductor capacitors
2001 ◽
Vol 41
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pp. 31-35
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1974 ◽
Vol 17
(4)
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pp. 349-365
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1995 ◽
Vol 13
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pp. 390
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1999 ◽
Vol 32
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pp. 64-71
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