Design and Modeling of High Efficiency Graphene Intensity/Phase Modulator Based on Ultra-Thin Silicon Strip Waveguide

2019 ◽  
Vol 37 (10) ◽  
pp. 2284-2292 ◽  
Author(s):  
Xiao Hu ◽  
Yuguang Zhang ◽  
Daigao Chen ◽  
Xi Xiao ◽  
Shaohua Yu
2015 ◽  
Author(s):  
Chin-Ta Chen ◽  
Xiaochuan Xu ◽  
Amir Hosseini ◽  
Zeyu Pan ◽  
Ray T. Chen

2014 ◽  
Vol 105 (17) ◽  
pp. 173906 ◽  
Author(s):  
R. Martini ◽  
J. Kepa ◽  
M. Debucquoy ◽  
V. Depauw ◽  
M. Gonzalez ◽  
...  

Author(s):  
Tipat Piyapatarakul ◽  
Hanzhi Tang ◽  
Kasidit Toprasertpong ◽  
Shinichi TAKAGI ◽  
Mitsuru TAKENAKA

Abstract We propose an optical phase modulator with a hybrid metal-oxide-semiconductor (MOS) capacitor, consisting of single-layer graphene and III-V semiconductor waveguide. The proposed modulator is numerically analyzed in conjunction with the surface conductivity model of graphene. Since the absorption of graphene at a 2 µm wavelength can be suppressed by modulating the chemical potential of graphene with the practical gate bias, the phase modulation efficiency is predicted to be 0.051 V·cm with a total insertion loss of 0.85 dB when an n-InGaAs waveguide is used, showing the feasibility of the low-loss, high-efficiency graphene/III-V hybrid MOS optical phase modulator, which is useful in the future 2-µm optical fiber communication band.


1994 ◽  
Vol 33 (4) ◽  
pp. 483-497 ◽  
Author(s):  
Swapan K. Datta ◽  
Kanak Mukhopadhyay ◽  
Pratip Kumar Pal ◽  
Hiranmay Saha

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