scholarly journals Numerical analysis of optical phase modulator operating at 2 μm wavelength using graphene/III-V hybrid metal-oxide-semiconductor capacitor

2021 ◽  
Author(s):  
Tipat Piyapatarakul ◽  
Hanzhi Tang ◽  
Kasidit Toprasertpong ◽  
Shinichi TAKAGI ◽  
Mitsuru TAKENAKA
Keyword(s):  
Metal Oxide ◽  
High Efficiency ◽  
Chemical Potential ◽  
Optical Fiber Communication ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Single Layer Graphene ◽  
Phase Modulator ◽  
Optical Phase ◽  
Hybrid Metal Oxide

Abstract We propose an optical phase modulator with a hybrid metal-oxide-semiconductor (MOS) capacitor, consisting of single-layer graphene and III-V semiconductor waveguide. The proposed modulator is numerically analyzed in conjunction with the surface conductivity model of graphene. Since the absorption of graphene at a 2 µm wavelength can be suppressed by modulating the chemical potential of graphene with the practical gate bias, the phase modulation efficiency is predicted to be 0.051 V·cm with a total insertion loss of 0.85 dB when an n-InGaAs waveguide is used, showing the feasibility of the low-loss, high-efficiency graphene/III-V hybrid MOS optical phase modulator, which is useful in the future 2-µm optical fiber communication band.

scholarly journals New Insight on Terahertz Rectification in a Metal–Oxide–Semiconductor Field-Effect Transistor Structure

Electronics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1089
Author(s):  
Fabrizio Palma
Keyword(s):  
Metal Oxide ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Efficiency ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Detection ◽  
Effect Transistor ◽  
Transistor Mos

The use of a metal–oxide–semiconductor field-effect transistor (MOS-FET) permits the rectification of electromagnetic radiation by employing integrated circuit technology. However, obtaining a high-efficiency rectification device requires the assessment of a physical model capable of providing a qualitative and quantitative explanation of the processes involved. For a long time, high-frequency detection based on MOS technology was explained using plasma wave detection theory. In this paper, we review the rectification mechanism in light of high-frequency numerical simulations, showing features never examined until now. The results achieved substantially change our understanding of terahertz (THz) rectification in semiconductors, and can be interpreted by the model based on the self-mixing process in the device substrate, providing a new and essential tool for designing this type of detector.

scholarly journals Taperless Si hybrid optical phase shifter based on a metal-oxide-semiconductor capacitor using an ultrathin InP membrane

2020 ◽  
Vol 28 (24) ◽  
pp. 35663
Author(s):  
Shuhei Ohno ◽  
Qiang Li ◽  
Naoki Sekine ◽  
Junichi Fujikata ◽  
Masataka Noguchi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Phase Shifter ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Optical Phase ◽  
Metal Oxide Semiconductor Capacitor
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