Fatigue Life Prediction Criterion for Micro–Nanoscale Single-Crystal Silicon Structures

2009 ◽  
Vol 18 (1) ◽  
pp. 129-137 ◽  
Author(s):  
Takahiro Namazu ◽  
Yoshitada Isono
Keyword(s):  
Fatigue Life ◽  
Single Crystal ◽  
Life Prediction ◽  
Single Crystal Silicon ◽  
Fatigue Life Prediction ◽  
Crystal Silicon ◽  
Silicon Structures

scholarly journals A Fatigue Life Prediction Model Based on Modified Resolved Shear Stress for Nickel-Based Single Crystal Superalloys

Metals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 180 ◽  
Author(s):  
Jialiang Wang ◽  
Dasheng Wei ◽  
Yanrong Wang ◽  
Xianghua Jiang
Keyword(s):  
Shear Stress ◽  
Fatigue Life ◽  
Prediction Model ◽  
Single Crystal ◽  
Life Prediction ◽  
Stress Amplitude ◽  
Damage Parameter ◽  
Fatigue Life Prediction ◽  
Model Based ◽  
Life Prediction Model

In this paper, the viewpoint that maximum resolved shear stress corresponding to the two slip systems in a nickel-based single crystal high-temperature fatigue experiment works together was put forward. A nickel-based single crystal fatigue life prediction model based on modified resolved shear stress amplitude was proposed. For the four groups of fatigue data, eight classical fatigue life prediction models were compared with the model proposed in this paper. Strain parameter is poor in fatigue life prediction as a damage parameter. The life prediction results of the fatigue life prediction model with stress amplitude as the damage parameter, the fatigue life prediction model with maximum resolved shear stress in 30 slip directions as the damage parameter, and the McDiarmid (McD) model, are better. The model proposed in this paper has higher life prediction accuracy.

Improved bending fatigue life of single crystal silicon micro-beam by phosphorus doping

2013 ◽  
Vol 53 (9-11) ◽  
pp. 1667-1671 ◽  
Author(s):  
Jun-Yong Tao ◽  
Xiao-Jing Wang ◽  
Bin Liu ◽  
Yan-Lei Wang ◽  
Zhi-Qian Ren ◽  
...  
Keyword(s):  
Fatigue Life ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Phosphorus Doping ◽  
Crystal Silicon ◽  
Bending Fatigue

Contact Melting of Aluminum-Silicon Structures under Conditions of Thermal Shock

2018 ◽  
Vol 771 ◽  
pp. 118-123 ◽  
Author(s):  
Arkady A. Skvortsov ◽  
Sergey M. Zuev ◽  
Marina V. Koryachko
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Contact Melting ◽  
Aluminum Film ◽  
Single Crystal Substrate ◽  
Density Currents ◽  
Crystal Silicon ◽  
Crystal Substrate ◽  
Silicon Structures ◽  
Single Crystal Silicon Substrate

The work is devoted to the study of contact melting in the Al-Si system, which is an aluminum film deposited on a silicon single-crystal substrate. The impulse action of high-density currents (j> 8.1010 A / m2) passing through an aluminum film is analyzed. It was found that under the considered electric heat loads in the system, the degradation processes associated with the appearance of a molten aluminum zone and subsequent contact melting in the metal-semiconductor system develop. From the analysis of contact melting processes, a technique for estimating the coefficients of multiphase diffusion in the system under consideration is a thin aluminum film-single-crystal silicon substrate.

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