scholarly journals Theory, Design, and Characterization of Nanoelectromechanical Relays for Stiction-Based Non-Volatile Memory

Author(s):  
Dinesh Pamunuwa ◽  
Elliott Worsey ◽  
Jamie D. Reynolds ◽  
Derek Seward ◽  
Harold M. H. Chong ◽  
...  
2001 ◽  
Vol 34 (1-4) ◽  
pp. 113-120 ◽  
Author(s):  
Chang Ho Shin ◽  
Seon Yong Cha ◽  
Hee Chul Lee ◽  
Won-Jae Lee ◽  
Byoung-Gon Yu ◽  
...  

1996 ◽  
Vol 12 (1) ◽  
pp. 23-31 ◽  
Author(s):  
R. E. Jones ◽  
Peter Zurcher ◽  
B. Jiang ◽  
J. Z. Witowski ◽  
Y. T. Lii ◽  
...  

2000 ◽  
Vol 638 ◽  
Author(s):  
Jan W. De Blauwe ◽  
Marty L. Green ◽  
Tom W. Sorsch ◽  
Garry R. Weber ◽  
Jeff D. Bude ◽  
...  

AbstractThis paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosol- nanocrystal NVM device features program/erase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>105 P/E cycles), and long-term non-volatility in spite of a thin bottom oxide (55-60Å). In addition, a very simple fabrication process makes this aerosol-nanocrystal NVM device a potential candidate for low cost NVM applications.


2006 ◽  
Vol 37 (8) ◽  
pp. 841-844 ◽  
Author(s):  
Feifei Liao ◽  
Yiqing Ding ◽  
Yinyin Lin ◽  
Tingao Tang ◽  
Baowei Qiao ◽  
...  

2012 ◽  
Vol 68 ◽  
pp. 73-79 ◽  
Author(s):  
E.S. Jeng ◽  
Y.F. Chen ◽  
C.C. Chang ◽  
K.M. Peng ◽  
S.W. Chou ◽  
...  

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