A novel, nanocrystal (nc) based non-volatile memory device

2000 ◽  
Vol 638 ◽  
Author(s):  
Jan W. De Blauwe ◽  
Marty L. Green ◽  
Tom W. Sorsch ◽  
Garry R. Weber ◽  
Jeff D. Bude ◽  
...  
Keyword(s):  
Low Cost ◽  
Electrical Characterization ◽  
Memory Device ◽  
Fabrication Process ◽  
Floating Gate ◽  
Potential Candidate ◽  
Non Volatile Memory ◽  
Volatile Memory

AbstractThis paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosol- nanocrystal NVM device features program/erase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>105 P/E cycles), and long-term non-volatility in spite of a thin bottom oxide (55-60Å). In addition, a very simple fabrication process makes this aerosol-nanocrystal NVM device a potential candidate for low cost NVM applications.

Electrical Characterization of Non Volatile Memory Device with In2O3 Nano-Particles Embedded in Polyimide

2007 ◽  
Vol 51 (96) ◽  
pp. 318 ◽  
Author(s):  
Dong Uk LEE ◽  
Seon Pil KIM ◽  
Jae-Hoon KIM ◽  
Eun Kyu KIM ◽  
Hyun-Mo KOO ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Memory Device ◽  
Nano Particles ◽  
Non Volatile Memory ◽  
Volatile Memory

Electrical characterization of SrBi2Ta2O9 thin films for ferroelectric non-volatile memory applications

1996 ◽  
Vol 12 (1) ◽  
pp. 23-31 ◽  
Author(s):  
R. E. Jones ◽  
Peter Zurcher ◽  
B. Jiang ◽  
J. Z. Witowski ◽  
Y. T. Lii ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Indium Gallium Arsenide Based Non-Volatile Memory Devices with Site-Specific Self-Assembled Germanium Quantum Dot Gate

2010 ◽  
Vol 1250 ◽  
Author(s):  
Pik-Yiu Chan ◽  
Mukesh Gogna ◽  
Ernesto Suarez ◽  
Fuad Alamoody ◽  
Supriya Karmakar ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Gallium Arsenide ◽  
Indium Gallium Arsenide ◽  
Field Effect Transistors ◽  
Memory Device ◽  
Floating Gate ◽  
Gate Insulator ◽  
Non Volatile Memory ◽  
Indium Gallium ◽  
Volatile Memory

AbstractThis paper presents the implementation of indium gallium arsenide field-effect transistors (InGaAs FETs) as non-volatile memory using lattice-matched II-VI gate insulator and quantum dots of GeOx-cladded Ge as the floating gate. Studies have been done to show the ability of II-VI materials to act as a tunneling gate material for InGaAs based FETs, and GeOx-cladded Ge quantum dots having the ability to store charges in the floating gate of a memory device. Proposed structure of the InGaAs device is presented.

Scaling Challenges of Floating Gate Non-Volatile Memory and Graphene as the Future Flash Memory Device: A Review

2019 ◽  
Vol 14 (9) ◽  
pp. 1195-1214 ◽  
Author(s):  
Afiq Hamzah ◽  
Hilman Ahmad ◽  
Michael Loong Peng Tan ◽  
N. Ezaila Alias ◽  
Zaharah Johari ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Device ◽  
Floating Gate ◽  
The Future ◽  
Non Volatile Memory ◽  
Volatile Memory

Read Back of Stored Data in Non Volatile Memory Devices by Scanning Capacitance Microscopy

2013 ◽  
Vol 1527 ◽  
Author(s):  
Rudra S. Dhar ◽  
St.J. Dixon-Warren ◽  
Mohamed A. Kawaliye ◽  
Jeff Campbell ◽  
Mike Green ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Device ◽  
Floating Gate ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Floating Gates ◽  
Scanning Capacitance Microscopy ◽  
Floating Gate Transistor ◽  
Non Volatile Memory ◽  
Volatile Memory

ABSTRACTThis report outlines a methodology for reading back different electrical charges, from Non Volatile Memory (NVM) based Flash devices. The charge is stored in the floating gates (FGs) of the transistors. Reading back these charges in the form of logic levels of “1 bit (1b)” and “0 bit (0b)” without deleting the information from the device was the goal. Scanning Capacitance Microscopy (SCM) with ∼50-100 nm spatial resolution was used, to directly probe the charge on Floating Gate Transistor (FGT) channels. Transistor charge values (ON/OFF or “1b/0b”) are measured. Both the sample preparation and SCM probing methods are discussed. The application has been demonstrated with SanDisk based 64 MB NAND Flash memory device.

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

Sign in / Sign up

Export Citation Format

Share Document