Characterization of single-sided gate-to-drain non-overlapped implantation nMOSFETs for multi-functional non-volatile memory applications

2012 ◽  
Vol 68 ◽  
pp. 73-79 ◽  
Author(s):  
E.S. Jeng ◽  
Y.F. Chen ◽  
C.C. Chang ◽  
K.M. Peng ◽  
S.W. Chou ◽  
...  
Keyword(s):  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Electrical characterization of SrBi2Ta2O9 thin films for ferroelectric non-volatile memory applications

1996 ◽  
Vol 12 (1) ◽  
pp. 23-31 ◽  
Author(s):  
R. E. Jones ◽  
Peter Zurcher ◽  
B. Jiang ◽  
J. Z. Witowski ◽  
Y. T. Lii ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Growth and characterization of epitaxial ferroelectric PbZrxTi1−xO3 thin film capacitors with SrRuO3 electrodes for non-volatile memory applications

2001 ◽  
Vol 45 (8) ◽  
pp. 1433-1440 ◽  
Author(s):  
C. Guerrero ◽  
J. Roldán ◽  
C. Ferrater ◽  
M.V. Garcia-Cuenca ◽  
F. Sánchez ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Capacitors ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Characterization of Au/PbTi0.5Fe0.5O3/Si structure for possible multiferroic based non-volatile memory applications

2017 ◽  
Vol 121 (11) ◽  
pp. 114105 ◽  
Author(s):  
S. Nawaz ◽  
S. Roy ◽  
A. A. Tulapurkar ◽  
V. R. Palkar
Keyword(s):  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Lead based ferroelectric capacitors for low voltage non-volatile memory applications

1998 ◽  
Vol 19 (1-4) ◽  
pp. 159-177 ◽  
Author(s):  
S. Aggarwal ◽  
A. S. Prakash ◽  
T. K. Song ◽  
S. Sadashivan ◽  
A. M. Dhote ◽  
...  
Keyword(s):  
Low Voltage ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications ◽  
Ferroelectric Capacitors

Characteristics of SrBi2Ta2O9 thin films prepared by pulsed laser deposition for non-volatile memory applications

2000 ◽  
Vol 375 (1-2) ◽  
pp. 200-204 ◽  
Author(s):  
Xinhua Zhu ◽  
Yiming Liu ◽  
Zhenghua An ◽  
Tao Zhu ◽  
Zhuangchun Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications
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