Electrical characterization of SrBi2Ta2O9 capacitors for non-volatile memory operation

1997 ◽  
Vol 16 (1-4) ◽  
pp. 175-182 ◽  
Author(s):  
Kazushi Amanuma ◽  
Takemitsu Kunio
Keyword(s):  
Electrical Characterization ◽  
Non Volatile Memory ◽  
Volatile Memory

Electrical characterization of SrBi2Ta2O9 thin films for ferroelectric non-volatile memory applications

1996 ◽  
Vol 12 (1) ◽  
pp. 23-31 ◽  
Author(s):  
R. E. Jones ◽  
Peter Zurcher ◽  
B. Jiang ◽  
J. Z. Witowski ◽  
Y. T. Lii ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

A novel, nanocrystal (nc) based non-volatile memory device

2000 ◽  
Vol 638 ◽  
Author(s):  
Jan W. De Blauwe ◽  
Marty L. Green ◽  
Tom W. Sorsch ◽  
Garry R. Weber ◽  
Jeff D. Bude ◽  
...  
Keyword(s):  
Low Cost ◽  
Electrical Characterization ◽  
Memory Device ◽  
Fabrication Process ◽  
Floating Gate ◽  
Potential Candidate ◽  
Non Volatile Memory ◽  
Volatile Memory

AbstractThis paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosol- nanocrystal NVM device features program/erase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>105 P/E cycles), and long-term non-volatility in spite of a thin bottom oxide (55-60Å). In addition, a very simple fabrication process makes this aerosol-nanocrystal NVM device a potential candidate for low cost NVM applications.

Electrical Characterization of Non Volatile Memory Device with In2O3 Nano-Particles Embedded in Polyimide

2007 ◽  
Vol 51 (96) ◽  
pp. 318 ◽  
Author(s):  
Dong Uk LEE ◽  
Seon Pil KIM ◽  
Jae-Hoon KIM ◽  
Eun Kyu KIM ◽  
Hyun-Mo KOO ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Memory Device ◽  
Nano Particles ◽  
Non Volatile Memory ◽  
Volatile Memory

Fabrication and characterization of MFISFET using Al2O3 insulating layer for non-volatile memory

2001 ◽  
Vol 34 (1-4) ◽  
pp. 113-120 ◽  
Author(s):  
Chang Ho Shin ◽  
Seon Yong Cha ◽  
Hee Chul Lee ◽  
Won-Jae Lee ◽  
Byoung-Gon Yu ◽  
...  
Keyword(s):  
Insulating Layer ◽  
Non Volatile Memory ◽  
Fabrication And Characterization ◽  
Volatile Memory

Complementary Resistive Switches (CRS): High speed performance for the application in passive nanocrossbar arrays

2011 ◽  
Vol 1337 ◽  
Author(s):  
Roland Rosezin ◽  
Eike Linn ◽  
Lutz Nielen ◽  
Carsten Kügeler ◽  
Rainer Bruchhaus ◽  
...  
Keyword(s):  
High Speed ◽  
Simple Procedure ◽  
Electrical Characterization ◽  
Building Blocks ◽  
Next Generation ◽  
High Uniformity ◽  
Non Volatile Memory ◽  
Speed Performance ◽  
Resistive Switches

ABSTRACTIn this report, the fabrication and electrical characterization of fully vertically integrated complementary resistive switches (CRS), which consist of two anti-serially connected Cu-SiO2 memristive elements, is presented. The resulting CRS cells are initialized by a simple procedure and show high uniformity of resistance states afterwards. Furthermore, the CRS cells show high switching speeds below 50 ns, making them excellent building blocks for next generation non-volatile memory based on passive nanocrossbar arrays.

scholarly journals Theory, Design, and Characterization of Nanoelectromechanical Relays for Stiction-Based Non-Volatile Memory

2022 ◽  
pp. 1-9
Author(s):  
Dinesh Pamunuwa ◽  
Elliott Worsey ◽  
Jamie D. Reynolds ◽  
Derek Seward ◽  
Harold M. H. Chong ◽  
...  
Keyword(s):  
Non Volatile Memory ◽  
Volatile Memory
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