Dark current noise characteristics and their temperature dependence in germanium avalanche photodiodes

1981 ◽  
Vol 17 (8) ◽  
pp. 1534-1539 ◽  
Author(s):  
H. Kanbe ◽  
G. Grosskopf ◽  
O. Mikami ◽  
S. Machida
2005 ◽  
Author(s):  
F. F. Sizov ◽  
J. V. Gumenjuk-Sichevska ◽  
I. O. Lysiuk ◽  
V. V. Zabudsky ◽  
A. G. Golenkov ◽  
...  

2020 ◽  
Vol 28 (11) ◽  
pp. 16211
Author(s):  
Hui Wang ◽  
Xiaohong Yang ◽  
Rui Wang ◽  
Tingting He ◽  
Kaibao Liu

2009 ◽  
Vol 615-617 ◽  
pp. 865-868
Author(s):  
Stanislav I. Soloviev ◽  
Alexey V. Vert ◽  
Jody Fronheiser ◽  
Peter M. Sandvik

In this work, avalanche photodiodes (APDs) were fabricated using a-plane 6H- and 4H-SiC materials to investigate their electrical and optical properties. Temperature dependence of avalanche breakdown was measured. The diode structures were fabricated with positive angle beveling and oxide passivation to ensure a uniform breakdown across the device area. Despite the apparent presence of micro-plasmas, we observed that the breakdown voltage of a-plane 6H-SiC APDs increased with temperature suggesting a positive temperature coefficient.


2018 ◽  
Vol 16 (6) ◽  
pp. 060401 ◽  
Author(s):  
Xingye Zhou Xingye Zhou ◽  
Jia Li Jia Li ◽  
Weili Lu Weili Lu ◽  
Yuangang Wang Yuangang Wang ◽  
Xubo Song Xubo Song ◽  
...  

2019 ◽  
Vol 37 (10) ◽  
pp. 2375-2379
Author(s):  
Leh Woon Lim ◽  
Chee Hing Tan ◽  
Jo Shien Ng ◽  
Jonathan D. Petticrew ◽  
Andrey B. Krysa

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