Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection

2018 ◽  
Vol 16 (6) ◽  
pp. 060401 ◽  
Author(s):  
Xingye Zhou Xingye Zhou ◽  
Jia Li Jia Li ◽  
Weili Lu Weili Lu ◽  
Yuangang Wang Yuangang Wang ◽  
Xubo Song Xubo Song ◽  
...  
Keyword(s):  
Dark Current ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Large Area ◽  
Ultraviolet Detection ◽  
Visible Blind

scholarly journals Low dark current and high gain-bandwidth product of avalanche photodiodes: optimization and realization

2020 ◽  
Vol 28 (11) ◽  
pp. 16211
Author(s):  
Hui Wang ◽  
Xiaohong Yang ◽  
Rui Wang ◽  
Tingting He ◽  
Kaibao Liu
Keyword(s):  
Dark Current ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Gain Bandwidth

scholarly journals Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

ACS Photonics ◽  
2020 ◽  
Vol 7 (2) ◽  
pp. 528-533 ◽  
Author(s):  
Baile Chen ◽  
Yating Wan ◽  
Zhiyang Xie ◽  
Jian Huang ◽  
Ningtao Zhang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Dark Current ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Inas Quantum Dot

Large Area Visible Blind 4H-SiC p+/N UV Photodiode Obtained by Aluminium Implantation

2016 ◽  
Vol 858 ◽  
pp. 1019-1022
Author(s):  
Antonella Sciuto ◽  
Massimo Mazzillo ◽  
Salvatore di Franco ◽  
Fabrizio Roccaforte
Keyword(s):  
Ion Implantation ◽  
Quantum Efficiency ◽  
Current Density ◽  
Dark Current ◽  
Optically Active ◽  
Dark Current Density ◽  
Large Area ◽  
Recombination Centers ◽  
Emission Microscopy ◽  
Visible Blind

4H-SiC junction photodiodes, obtained by aluminium (Al) ion- implantation on low doped n-type epilayers are widely characterized observing an extremely low dark current density < 1 nA/cm2 at -100 V up to 90°C, a peak responsivity of 0.11 A/W at 280 nm corresponding to a quantum efficiency of 50% and a visible blindness > 103. The absence of optically active defects and pairs recombination centers was monitored by electro-optical and Emission Microscopy measurements.

High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

2020 ◽  
Vol 116 (8) ◽  
pp. 081101 ◽  
Author(s):  
Pramod Reddy ◽  
M. Hayden Breckenridge ◽  
Qiang Guo ◽  
Andrew Klump ◽  
Dolar Khachariya ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
High Gain ◽  
Large Area ◽  
Solar Blind

High Gain, Low Dark Current Al0.8In0.2As0.23Sb0.77 Avalanche Photodiodes

2019 ◽  
Vol 31 (24) ◽  
pp. 1948-1951 ◽  
Author(s):  
Andrew H. Jones ◽  
Ann-Kathryn Rockwell ◽  
Stephen D. March ◽  
Yuan Yuan ◽  
Seth R. Bank ◽  
...  
Keyword(s):  
Dark Current ◽  
Avalanche Photodiodes ◽  
High Gain
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