830-nm AlGaAs-InGaAs Graded Index Double Barrier Separate Confinement Heterostructures Laser Diodes With Improved Temperature and Divergence Characteristics

2013 ◽  
Vol 49 (1) ◽  
pp. 127-132 ◽  
Author(s):  
Chih-Tsang Hung ◽  
Tien-Chang Lu
Keyword(s):  
Laser Diodes ◽  
Double Barrier ◽  
Graded Index

High-Power Low Vertical Beam Divergence 800-nm-Band Double-Barrier-SCH GaAsP–(AlGa)As Laser Diodes

2006 ◽  
Vol 18 (15) ◽  
pp. 1582-1584 ◽  
Author(s):  
A. Malag ◽  
A. Jasik ◽  
M. Teodorczyk ◽  
A. Jagoda ◽  
A. Kozlowska
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Beam Divergence ◽  
Double Barrier ◽  
Vertical Beam

Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes

2018 ◽  
Vol 116 ◽  
pp. 114-121 ◽  
Author(s):  
Agata Bojarska ◽  
Jakub Goss ◽  
Szymon Stanczyk ◽  
Irina Makarowa ◽  
Dario Schiavon ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Graded Index ◽  
Nitride Laser

Interface Recombination and Threshold Current in Grinsch-QW ALGaAs/GaAs Laser Diodes

1991 ◽  
Vol 240 ◽  
Author(s):  
K. Xie ◽  
H. M. Kim ◽  
C. R. Wie ◽  
J. A. Varriano ◽  
G. W. Wicks
Keyword(s):  
Transport Process ◽  
Carrier Transport ◽  
Deep Level ◽  
Laser Diodes ◽  
Threshold Current ◽  
High Threshold ◽  
High Concentration ◽  
Double Crystal ◽  
Graded Index ◽  
Interface Recombination

ABSTRACTA series of Graded-Index Waveguide Separate-Confinement Heterostructure Quantum Well (GRINSCH-QW) laser diodes were grown by MBE at the systematically varied substrate temperatures. The threshold current of laser diodes were found to depend strongly on the growth temperature. The structure and electrical characteristics of the laser diodes were studied by double-crystal x-ray diffraction, I-V-T, C-V and deep level transient spectroscopy (DLTS). The interface recombination is found to be the dominant carrier transport process in the high threshold current laser diodes and is closely related to the presence of the high concentration of deep traps and interface states. In the low threshold current laser diodes, diffusion process is found to be the dominant carrier transport process.

High Quantum Efficiency, High Output Power 1.3 µm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes

1989 ◽  
Vol 28 (Part 2, No. 4) ◽  
pp. L661-L663 ◽  
Author(s):  
Akihiko Kasukawa ◽  
Ian John Murgatroyd ◽  
Yoshihiro Imajo ◽  
Narihito Matsumoto ◽  
Toru Fukushima ◽  
...  
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
High Output Power ◽  
High Quantum Efficiency ◽  
Graded Index ◽  
High Output

1.5 µm GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition

1992 ◽  
Vol 31 (Part 1, No. 5A) ◽  
pp. 1365-1371 ◽  
Author(s):  
Akihiko Kasukawa ◽  
Rajaram Bhat ◽  
Catherine Caneau ◽  
Nicholas C. Andreadakis ◽  
Bhadresh Pathak ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Graded Index ◽  
Quantum Well Laser ◽  
Organometallic Chemical Vapor Deposition

Graded-index separate confinement heterostructure InGaN laser diodes

2013 ◽  
Vol 103 (26) ◽  
pp. 261107 ◽  
Author(s):  
S. Stańczyk ◽  
T. Czyszanowski ◽  
A. Kafar ◽  
J. Goss ◽  
S. Grzanka ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Graded Index
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