Low threshold current density 1.5 μm GaInAs/AlGaInAs graded-index separate-confinement-heterostructure quantum well laser diodes grown by metal organic chemical vapour deposition

1991 ◽  
Vol 27 (12) ◽  
pp. 1063 ◽  
Author(s):  
A. Kasukawa ◽  
R. Bhat ◽  
C.E. Zah ◽  
S.A. Schwarz ◽  
D.M. Hwang ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Laser Diodes ◽  
Chemical Vapour ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Organic Chemical ◽  
Graded Index ◽  
Quantum Well Laser ◽  
Metal Organic ◽  
Low Threshold

Extremely low threshold current density InGaAs/GaAs/AIGaAs strained SQW laser grown by MBE with As2

1996 ◽  
Vol 74 (S1) ◽  
pp. 1-4 ◽  
Author(s):  
M. Dion ◽  
Z. R. Wasilewski ◽  
F. Chatenoud ◽  
V. K. Gupta ◽  
A. R. Pratt ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Single Quantum Well ◽  
Graded Index ◽  
Quantum Well Laser ◽  
Gaas Barrier ◽  
Low Threshold ◽  
Cladding Layers

In this report, we present data on an InGaAs/GaAs strained single quantum well laser with the lowest reported threshold current density to date, namely 44 A cm−2 for a 3 mm cavity length. This was grown by solid-source molecular-beam epitaxy with the arsenic dimer, As2. The structure is that of a graded-index, separate-confinement heterostructure with a single strained InGaAs quantum well, sandwiched between GaAs barrier layers and AlGaAs cladding layers. The wavelength of the lasers was around 985 nm, and the internal efficiency and losses were 69% and 0.70 cm−1, respectively. In addition, data on the uniformity of our lasers, which are grown on rotating 2 in substrates (1 in = 2.54 cm), show drops in photoluminescence emission wavelength and layer thickness of less than 4 nm and 4%, respectively, from the centre to the edge of the wafer and very little compositional change.

Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition

2000 ◽  
Vol 36 (21) ◽  
pp. 1776 ◽  
Author(s):  
M. Kawaguchi ◽  
E. Gouardes ◽  
D. Schlenker ◽  
T. Kondo ◽  
T. Miyamoto ◽  
...  
Keyword(s):  
Quantum Well ◽  
Chemical Vapour Deposition ◽  
Current Density ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Low Threshold ◽  
Metalorganic Chemical Vapour Deposition ◽  
Metalorganic Chemical

Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density

2014 ◽  
Vol 31 (5) ◽  
pp. 054204 ◽  
Author(s):  
Jun-Liang Xing ◽  
Yu Zhang ◽  
Yong-Ping Liao ◽  
Juan Wang ◽  
Wei Xiang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Room Temperature ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Laser ◽  
Low Threshold ◽  
Room Temperature Operation

Effects of rapid thermal annealing on InAsP/InP strained multiquantum well laser diodes grown by metal organic chemical vapour deposition

2000 ◽  
Vol 36 (12) ◽  
pp. 1026 ◽  
Author(s):  
Chong-Yi Lee ◽  
Meng-Chyi Wu ◽  
Ya-De Tian ◽  
Wei-Han Wang ◽  
Wen-Jeng Ho ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Laser Diodes ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Metal Organic ◽  
Multiquantum Well

Low threshold current density 1.3 [micro sign]m metamorphic InGaAs/GaAs quantum well laser diodes

2008 ◽  
Vol 44 (7) ◽  
pp. 474 ◽  
Author(s):  
D. Wu ◽  
H. Wang ◽  
B. Wu ◽  
H. Ni ◽  
S. Huang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Laser ◽  
Low Threshold
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