Near-Field Scanning Nanophotonic Microscopy—Breaking the Diffraction Limit Using Integrated Nano Light-Emitting Probe Tip

2009 ◽  
Vol 15 (5) ◽  
pp. 1393-1399 ◽  
Author(s):  
K. Hoshino ◽  
A. Gopal ◽  
Xiaojing Zhang
Keyword(s):  
Near Field ◽  
Diffraction Limit ◽  
Light Emitting ◽  
Near Field Scanning

Near-Field Scanning Optical Microscopy for Through-Silicon Imaging and Fault Isolation of Integrated Circuits

2014 ◽  
Author(s):  
R. Giridharagopal ◽  
T.M. Eiles ◽  
B. Niu
Keyword(s):  
Optical Microscopy ◽  
Integrated Circuit ◽  
Near Field ◽  
Diffraction Limit ◽  
Fault Isolation ◽  
Lateral Resolution ◽  
Excitation Wavelength ◽  
Process Technology ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

Abstract We present the first known images acquired using near-field scanning optical microscopy (NSOM) through backside silicon on functional integrated circuit samples with higher resolution than conventional fault isolation (FI) tools. NSOM offers the possibility of substantially-improved lateral resolution independent of excitation wavelength. Current FI techniques have challenged the resolution limits of conventional optics technology, even in the best solid immersion lens (SIL) to date. This poses a problem for future process technology nodes. This resolution barrier is a by-product of the diffraction limit. In Fourier terms, a conventional lens filters out highfrequency information and thus limits the resolution. In NSOM, by placing a tip with an aperture in extreme proximity to the surface it is possible to capture the near-field light that contains high-frequency information, thereby circumventing the diffraction limit. The tangible benefit is that the resolution is substantially improved. We show that NSOM can be used in backside subsurface imaging of silicon, mirroring the paradigm used in typical optical FI. We present optical reflectance data through ~100 nm of remaining backside Si on functional 22 nm CMOS IC parts with lateral resolution approaching 100 nm. We then discuss potential methods for using NSOM in practical backside fault isolation applications and for improving signal-to-noise ratio (SNR).

Near-field scanning optical microscopy imaging of luminescent polymers

1996 ◽  
Vol 54 ◽  
pp. 860-861
Author(s):  
J. Kerimo ◽  
D. A. Vanden Bout ◽  
D. A. Higgins ◽  
P.F. Barbara
Keyword(s):  
Organic Semiconductors ◽  
Near Field ◽  
Practical Importance ◽  
Numerical Aperture ◽  
Optical Resolution ◽  
Microscopy Imaging ◽  
Light Emitting ◽  
Scanning Optical Microscopy ◽  
Luminescent Polymer ◽  
Near Field Scanning

Conjugated polymers such as poly(p-pyridyl vinylene)(PPyV) have interesting photoluminescence and electroluminescence properties. These polymers have a high quantum yield of luminescence and are of great practical importance as light-emitting diodes or organic semiconductors. We have performed studies on thin films(about 50nm) of these polymers using the high spatial optical resolution of NSOM.The luminescent polymer film was excited with 488nm light and the fluorescence was collected with a high numerical aperture microscope objective. Topography and NSOM fluorescence images were collected simultaneously and used for studying the morphology and optical properties of the film. An example of topography and fluorescence NSOM images of the film is shown in Fig. 1a. The films are very flat (2nm rms variations in topography) and have very few features. The NSOM fluorescence image shows great film inhomogeneity with bright features varying in size from 80-250nm observed throughout (Fig. 1b). These features do not correlate with the topography, indicating they may be located in the bulk of the polymer or are simply not resolvable in the topography image.

Optical Trapping, Sensing, and Imaging by Photonic Nanojets

Photonics ◽  
2021 ◽  
Vol 8 (10) ◽  
pp. 434
Author(s):  
Heng Li ◽  
Wanying Song ◽  
Yanan Zhao ◽  
Qin Cao ◽  
Ahao Wen
Keyword(s):  
Optical Tweezers ◽  
Optical Trapping ◽  
Near Field ◽  
Super Resolution ◽  
Diffraction Limit ◽  
Research Progress ◽  
Optical Forces ◽  
Resolution Imaging ◽  
Photonic Nanojets ◽  
Near Field Scanning

The optical trapping, sensing, and imaging of nanostructures and biological samples are research hotspots in the fields of biomedicine and nanophotonics. However, because of the diffraction limit of light, traditional optical tweezers and microscopy are difficult to use to trap and observe objects smaller than 200 nm. Near-field scanning probes, metamaterial superlenses, and photonic crystals have been designed to overcome the diffraction limit, and thus are used for nanoscale optical trapping, sensing, and imaging. Additionally, photonic nanojets that are simply generated by dielectric microspheres can break the diffraction limit and enhance optical forces, detection signals, and imaging resolution. In this review, we summarize the current types of microsphere lenses, as well as their principles and applications in nano-optical trapping, signal enhancement, and super-resolution imaging, with particular attention paid to research progress in photonic nanojets for the trapping, sensing, and imaging of biological cells and tissues.

scholarly journals Near-field scanning optical microscopy with monolithic silicon light emitting diode on probe tip

2008 ◽  
Vol 92 (13) ◽  
pp. 131106 ◽  
Author(s):  
Kazunori Hoshino ◽  
Lynn J. Rozanski ◽  
David A. Vanden Bout ◽  
Xiaojing Zhang
Keyword(s):  
Optical Microscopy ◽  
Light Emitting Diode ◽  
Near Field ◽  
Light Emitting ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

Near-field scanning optical micro probe integrated with a nanometer-sized light emitting diode

2007 ◽  
Author(s):  
Kazunori Hoshino ◽  
Lynn Rozanski ◽  
David A. Vanden Bout ◽  
Xiaojing Zhang
Keyword(s):  
Light Emitting Diode ◽  
Near Field ◽  
Light Emitting ◽  
Near Field Scanning

Near-Field Optical Spectroscopy: Enhancing the Light Budget

1997 ◽  
Vol 3 (S2) ◽  
pp. 815-816
Author(s):  
M.A. Paesler ◽  
H.D. Hallen ◽  
B.I. Yakobson ◽  
C.J. Jahncke ◽  
P.O. Boykin ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Molecule ◽  
Raman Effect ◽  
Near Field ◽  
Optical Microscope ◽  
Diffraction Limit ◽  
Topographic Image ◽  
Optical Aperture ◽  
Near Field Scanning ◽  
Low Drift

The near-field scanning optical microscope, or NSOM, provides spectroscopists with resolution beneath the diffraction limit. In the NSOM, an optical aperture smaller than the wavelength λ of the probe radiation is scanned in the near-field of a sample. Pixels are serially gathered and then constituted as a computer-generated image. Spectroscopic NSOM investigations demonstrating sub-λ, resolution include studies of photoluminescence, Raman spectroscopy, and single molecule fluorescence. Results of nano-Raman spectroscopy on semiconducting Rb-doped KTP are shown in figure 1. Figure la is a topographic image of the sample showing a square Rb-doped region in an otherwise undoped sample. Figure lc is a NSOM region of the corner of the doped region, and figure lb is an image of the same region taken within a Raman line. While these data do provide sub-λ spectroscopic resolution and other interesting features, the weak signal provided by current NSOM technologies and the low quantum efficiency of the Raman effect necessitated development of a very low-drift microscope and inconveniently long collection times.

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