Special Topic on Nonvolatile Memory for Efficient Implementation of Neural/Neuromorphic Computing

Halide perovskites (HPs) are promising materials for preparing nonvolatile memory and artificial synapse devices. However, the instability and toxicity of lead HPs seriously restrict their further application. Herein, a lead-free...

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Nanoimaging of Organic Charge Retention Effects: Implications for Nonvolatile Memory, Neuromorphic Computing, and High Dielectric Breakdown Devices

ACS Applied Nano Materials ◽

10.1021/acsanm.9b01182 ◽

2019 ◽

Vol 2 (8) ◽

pp. 4711-4716 ◽

Cited By ~ 1

Author(s):

Yingjie Zhang ◽

Jun Kang ◽

Olivier Pluchery ◽

Louis Caillard ◽

Yves J. Chabal ◽

...

Keyword(s):

Nonvolatile Memory ◽

Dielectric Breakdown ◽

Neuromorphic Computing ◽

Charge Retention ◽

High Dielectric

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Efficient implementation of synaptic learning rules for neuromorphic computing based on plasma-treated ZnO nanowire memristors

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ab5382 ◽

2019 ◽

Vol 53 (5) ◽

pp. 055303

Author(s):

Jiandong Wan ◽

Wenbiao Qiu ◽

Yunfeng Lai ◽

Peijie Lin ◽

Qiao Zheng ◽

...

Keyword(s):

Efficient Implementation ◽

Zno Nanowire ◽

Neuromorphic Computing ◽

Learning Rules ◽

Synaptic Learning

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Evolutionary 2D organic crystals for optoelectronic transistors and neuromorphic computing

Neuromorphic Computing and Engineering ◽

10.1088/2634-4386/ac4a84 ◽

2022 ◽

Author(s):

Fangsheng Qian ◽

Xiaobo Bu ◽

Junjie Wang ◽

Ziyu Lv ◽

Su-Ting Han ◽

...

Keyword(s):

Data Storage ◽

Nonvolatile Memory ◽

Wide Spectrum ◽

Organic Crystals ◽

Algorithm Optimization ◽

Neuromorphic Computing ◽

Memory Circuit ◽

Computing Paradigm ◽

Free Interfaces ◽

Shielding Effects

Abstract Brain-inspired neuromorphic computing has been extensively researched, taking advantage of increased computer power, the acquisition of massive data, and algorithm optimization. Neuromorphic computing requires mimicking synaptic plasticity and enables near-in-sensor computing. In synaptic transistors, how to elaborate and examine the link between microstructure and characteristics is a major difficulty. Due to the absence of interlayer shielding effects, defect-free interfaces, and wide spectrum responses, reducing the thickness of organic crystals to the 2D limit has a lot of application possibilities in this computing paradigm. This paper presents an update on the progress of 2D organic crystal-based transistors for data storage and neuromorphic computing. The promises and synthesis methodologies of 2D organic crystals are summarized. Following that, applications of 2D organic crystals for ferroelectric nonvolatile memory, circuit-type optoelectronic synapses, and neuromorphic computing are addressed. Finally, new insights and challenges for the field's future prospects are presented, pushing the boundaries of neuromorphic computing even farther.

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Investigation of ferroelectrics using conventional and in situ electron microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170669 ◽

1994 ◽

Vol 52 ◽

pp. 586-587

Author(s):

V. Saikumar ◽

H. M. Chan ◽

M. P. Harmer

Keyword(s):

Nonvolatile Memory ◽

Ferroelectric Materials ◽

Gate Insulator ◽

Sensors And Actuators ◽

In Situ Electron Microscopy ◽

Ferroelectric Domains ◽

Domain Boundaries ◽

Domain Interactions ◽

Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

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Epitaxial ferroelectric thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170591 ◽

1994 ◽

Vol 52 ◽

pp. 572-573

Author(s):

S. G. Ghonge ◽

E. Goo ◽

R. Ramesh ◽

R. Haakenaasen ◽

D. K. Fork

Keyword(s):

Single Crystal ◽

Work Function ◽

Nonvolatile Memory ◽

Ferroelectric Properties ◽

Electrical Contact ◽

Memory Devices ◽

Ferroelectric Films ◽

Si Substrates ◽

Electro Optic ◽

Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

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