The two-dimensional electron gas (2DEG) at the heterointerface of AlGaN and GaN is a complicated transcendental function of gate voltage, so an analytical charge control model for AlGaN/GaN high electron mobility transistor (HEMT) is presented accounting for all the three regions of operation (i.e., sub-threshold, moderate, and strong-inversion region). In addition to it, the performance of AlGaN/GaN HEMT is highly dependent on the device geometry. Therefore, to get the optimum performance of the device it is advisable to optimize the parameters governing the device geometry. Accordingly, the output and transfer characteristics, threshold voltage, ON current, OFF current, and transconductance are calculated using numerical computations. The present design is tested to calculate the voltage transfer characteristics (VTC) and transient characteristics of the invertor circuit, after the optimization of the device parameters.
Non-destructive determination of ultra-thin GaN cap layer thickness in AlGaN/GaN HEMT structure by angle resolved x-ray photoelectron spectroscopy (ARXPS)