device geometry
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2022 ◽  
Vol 8 (1) ◽  
pp. 2270001
Author(s):  
Sumaiya Kabir ◽  
Shruti Nirantar ◽  
Mahta Monshipouri ◽  
Mei Xian Low ◽  
Sumeet Walia ◽  
...  

2021 ◽  
pp. 2100428
Author(s):  
Sumaiya Kabir ◽  
Shruti Nirantar ◽  
Mahta Monshipouri ◽  
Mei Xian Low ◽  
Sumeet Walia ◽  
...  

2021 ◽  
Vol 130 (12) ◽  
pp. 125501
Author(s):  
Jakob Leise ◽  
Jakob Pruefer ◽  
Ghader Darbandy ◽  
Aristeidis Nikolaou ◽  
Michele Giorgio ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Ádám Papp ◽  
Martina Kiechle ◽  
Simon Mendisch ◽  
Valentin Ahrens ◽  
Levent Sahin ◽  
...  

AbstractWe experimentally demonstrate the operation of a Rowland-type concave grating for spin waves, with potential application as a microwave spectrometer. In this device geometry, spin waves are coherently excited on a diffraction grating and form an interference pattern that focuses spin waves to a point corresponding to their frequency. The diffraction grating was created by focused-ion-beam irradiation, which was found to locally eliminate the ferrimagnetic properties of YIG, without removing the material. We found that in our experiments spin waves were created by an indirect excitation mechanism, by exploiting nonlinear resonance between the grating and the coplanar waveguide. Although our demonstration does not include separation of multiple frequency components, since this is not possible if the nonlinear excitation mechanism is used, we believe that using linear excitation the same device geometry could be used as a spectrometer. Our work paves the way for complex spin-wave optic devices—chips that replicate the functionality of integrated optical devices on a chip-scale.


2020 ◽  
Vol 19 (06) ◽  
pp. 2050011
Author(s):  
Yogesh Kumar Verma ◽  
Varun Mishra ◽  
Santosh Kumar Gupta

The two-dimensional electron gas (2DEG) at the heterointerface of AlGaN and GaN is a complicated transcendental function of gate voltage, so an analytical charge control model for AlGaN/GaN high electron mobility transistor (HEMT) is presented accounting for all the three regions of operation (i.e., sub-threshold, moderate, and strong-inversion region). In addition to it, the performance of AlGaN/GaN HEMT is highly dependent on the device geometry. Therefore, to get the optimum performance of the device it is advisable to optimize the parameters governing the device geometry. Accordingly, the output and transfer characteristics, threshold voltage, ON current, OFF current, and transconductance are calculated using numerical computations. The present design is tested to calculate the voltage transfer characteristics (VTC) and transient characteristics of the invertor circuit, after the optimization of the device parameters.


Author(s):  
Sarita Misra ◽  
Sudhansu Mohan Biswal ◽  
Biswajit Baral ◽  
Sanjit Kumar Swain ◽  
Angsuman Sarkar ◽  
...  

2020 ◽  
Vol 20 (6) ◽  
pp. 3636-3646
Author(s):  
Manoj Kumar ◽  
Sanju Rani ◽  
Yogesh Singh ◽  
V. N. Singh

Thermoelectric is a device that converts heat into electricity. As thermodynamically it is not possible to make device which is 100 percent efficient, some amount of energy is wasted in the form of heat. Thermoelectric materials can play a major role in harnessing such waste energy. Although thermoelectric is a useful device still its efficiency is not good enough for commercialization. Therefore, lots of research have been carried out in finding out the best possible material, device geometry etc. There are thousands of papers describing various optimization processes. The present work reviews the basics of thermoelectric device parameters which determine the performance of the device and how to control these parameters for better thermoelectric efficiency. The efforts made to optimize parameters like power factor, thermal conductivity etc. have been summarized. Experimental results have been described with examples. Highest reported ZT values of various materials have been presented in this review.


2020 ◽  
Vol 101 (16) ◽  
Author(s):  
Zachary A. H. Goodwin ◽  
Valerio Vitale ◽  
Fabiano Corsetti ◽  
Dmitri K. Efetov ◽  
Arash A. Mostofi ◽  
...  

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