SONOS-type flash memory using an HfO/sub 2/ as a charge trapping layer deposited by the sol-gel spin-coating method

2006 ◽  
Vol 27 (8) ◽  
pp. 653-655 ◽  
Author(s):  
Hsin-Chiang You ◽  
Tze-Hsiang Hsu ◽  
Fu-Hsiang Ko ◽  
Jiang-Wen Huang ◽  
Wen-Luh Yang ◽  
...  
2007 ◽  
Vol 154 (4) ◽  
pp. H268 ◽  
Author(s):  
Fu-Hsiang Ko ◽  
Hsin-Chiang You ◽  
Chun-Ming Chang ◽  
Wen-Luh Yang ◽  
Tan-Fu Lei

2017 ◽  
Vol 623 ◽  
pp. 14-18 ◽  
Author(s):  
Fenglin Tang ◽  
Chao Mei ◽  
Peiyu Chuang ◽  
Tingting Song ◽  
Hailin Su ◽  
...  

Author(s):  
Ibrahim Mohd Yazid ◽  
Muhammad Hazim Raselan ◽  
Shafinaz Sobihana Shariffudin ◽  
Puteri Sarah Mohamad Saad ◽  
Sukreen Hana ◽  
...  

2014 ◽  
Vol 2 (21) ◽  
pp. 4233-4238 ◽  
Author(s):  
Jiaqing Zhuang ◽  
Su-Ting Han ◽  
Ye Zhou ◽  
V. A. L. Roy

Hafnium dioxide (HfO2) film prepared by the sol–gel technique has been used as a charge trapping layer in organic flash memory.


2020 ◽  
Author(s):  
A. Amali Roselin ◽  
N. Anandhan ◽  
I. Joseph Paneer Doss ◽  
G. Gopu ◽  
K. P. Ganesan ◽  
...  

2012 ◽  
Vol 64 (1) ◽  
pp. 219-223 ◽  
Author(s):  
M. Cavas ◽  
R. K. Gupta ◽  
A. A. Al-Ghamdi ◽  
Omar A. Al-Hartomy ◽  
Farid El-Tantawy ◽  
...  

2021 ◽  
Vol 16 (6) ◽  
pp. 967-973
Author(s):  
Shuai Zhao ◽  
Dong-Xue Lin ◽  
Yu-Xin Wang

All of the TiO2 films including intrinsic TiO2 film, Zn single doped film with 2.0 at% content and N doped films with 4.0 at%, 6.0 at%, 8.0 at% and 10.0 at% content, were obtained by butyl titanate (Ti(OC4H9)4) as a titanium source, zinc nitrate (Zn(NO3)2·6H2O) as zinc source and urea (H2 NCONH2) as nitrogen source, which was calcined at 600 °C on the glass substrate and Si substrate using sol–gel spin coating method. The structures, morphology and optical properties of various films were analyzed and studied by X ray diffract meter (XRD), ultraviolet-visible spectrophotometer (UV-Vis) and scanning electron microscope (SEM). The results indicated that the main crystal plane of TiO2 film was (101) and any impurity crystal plane didn't appear. All samples had obvious red shifts in the absorbing edge overall and reduced significantly the width of forbidden band, especially, the N doping content with 8.0 at% was surprised to investigate the strongest (101) peak intensity, the sharpest peak type, the best meritocratic orientation, the greatest red shift of the absorption spectrum, the lowest optical band gap value of 3.356 eV, and the highest utilization rate of visible light of the sample. However, the surface morphology of the others films except the N doping content with 8.0 at% is not further improved by co-doping, that is, their surfaces were still rough, had obvious voids and uneven distribution between the grains. Meanwhile, the intensity of the (101) crystalline diffraction peaks of these samples were reduced and the crystalline spacing generally increased after co-doping.


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