Femtosecond all-optical AND gates based on low-temperature-grown Be-doped strained InGaAs/InAlAs multiple quantum wells
Keyword(s):
Keyword(s):
1999 ◽
pp. 122-133
◽
Keyword(s):
1991 ◽
Vol 23
(7)
◽
pp. S925-S939
◽
Keyword(s):
2013 ◽
Vol 25
(6)
◽
pp. 1523-1526
2008 ◽
Vol 20
(22)
◽
pp. 1851-1853
◽
Keyword(s):
Keyword(s):
2006 ◽
Vol 45
(4A)
◽
pp. 2412-2416
◽