Improved thermal stability of GaAs/AlGaAs single quantum well by Zn out-diffusion from Zn doped GaAs substrate

Author(s):  
F. Zhao ◽  
I.W. Choi ◽  
P. Hing ◽  
S. Yuan ◽  
T.K. Ong ◽  
...  
1994 ◽  
Vol 354 ◽  
Author(s):  
P J Hughes ◽  
E H Li ◽  
B L Weiss ◽  
H E Jackson ◽  
J S Roberts

AbstractThe effects of interdiffusion on the band structure of two MxGaUxAs/GaAs single quantum well (SQW) structures were studied using room temperature photoreflectance. Rapid thermal annealing of the SQW structures at temperatures of 800°C, 900°C and 1000°C for times up to 180 seconds resulted in limited interdiffusion. Low dose (1014 cm”2) oxygen implantation reduced the thermal stability of these structures where the extent of the interdiffusion was found to be greater for the implanted samples for identical annealing conditions.


2003 ◽  
Vol 426 (1-2) ◽  
pp. 186-190 ◽  
Author(s):  
Feng Zhao ◽  
I.W. Choi ◽  
Shu Yuan ◽  
C.Y. Liu ◽  
J. Jiang ◽  
...  

1993 ◽  
Vol 29 (1) ◽  
pp. 98-99 ◽  
Author(s):  
H. Kurakake ◽  
T. Uchida ◽  
H. Soda ◽  
S. Yamazaki

RSC Advances ◽  
2019 ◽  
Vol 9 (65) ◽  
pp. 38114-38118 ◽  
Author(s):  
Haolin Li ◽  
Jilong Tang ◽  
Guotao Pang ◽  
Dengkui Wang ◽  
Xuan Fang ◽  
...  

GaAs/GaAs1−xSbx/GaAs coaxial single quantum-well nanowires with larger Sb content result in better electron confinement, which greatly improves their thermal stability.


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