A New Bamboo-Shaped Sensor for Curvature Measurement with Microstructured Fiber

Author(s):  
Ying Guo ◽  
Yundong Zhang
2011 ◽  
Vol 50 (21) ◽  
pp. 3742 ◽  
Author(s):  
G. Statkiewicz-Barabach ◽  
J. P. Carvalho ◽  
O. Frazão ◽  
J. Olszewski ◽  
P. Mergo ◽  
...  

2009 ◽  
Vol 34 (10) ◽  
pp. 1531 ◽  
Author(s):  
Libo Yuan ◽  
Qiang Dai ◽  
Fengjun Tian ◽  
Tao Zhang ◽  
Chunying Guan ◽  
...  

1992 ◽  
Vol 264 ◽  
Author(s):  
Y.H. Jeng ◽  
Mirng-Ji Lii

AbstractA laser based surface scanning technique was utilized to measure the polyimide coated silicon wafer curvature resulting from thermal cycling and mismatch, Meanwhile, mechanical properties of polyimide thin film were characterized by DMA, TMA and tensile test. Based on the obtained material properties, A FEA model was developed to analyze the experimental results -reasonable correlation was obtained.Similar approaches were taken one step further in the MCM silicon substrate curvature measurement. In a MCM package with silicon substrate, epoxy adhesive, and ceramic package, substrate warpage was developed in a thermal cycle due to thermal mismatch between the substrate and the package and coupling effect linked by epoxy adhesive. Three different substrate curvature measurement techniques were applied to identify the substrate curvature and epoxy thin film properties were also well characterized. A 3D FEA model incorporating with the epoxy material properties was developed to analyze the substrate warpage and investigate an optimal package design.


Author(s):  
Yu-Hsiang Chen ◽  
Chin-Ping Yu ◽  
Chi-Wen Huang ◽  
Yean-Woei Kiang ◽  
Hung-chun Chang ◽  
...  

2004 ◽  
Vol 16 (7) ◽  
pp. 1667-1669 ◽  
Author(s):  
A. Ortigosa-Blanch ◽  
A. Diez ◽  
M. Delgado-Pinar ◽  
J.L. Cruz ◽  
M.V. Andres

2014 ◽  
Vol 53 (8) ◽  
pp. 080501 ◽  
Author(s):  
Susana O. Silva ◽  
Jean-Louis Auguste ◽  
Raphael Jamier ◽  
Sébastien Rougier ◽  
Jose M. Baptista ◽  
...  

2011 ◽  
Vol 1299 ◽  
Author(s):  
Ping Du ◽  
I-Kuan Lin ◽  
Yunfei Yan ◽  
Xin Zhang

ABSTRACTSilicon carbide (SiC) has received increasing attention on the integration of microelectro-mechanical system (MEMS) due to its excellent mechanical and chemical stability at elevated temperatures. However, the deposition process of SiC thin films tends to induce relative large residual stress. In this work, the relative low stress material silicon oxide was added into SiC by RF magnetron co-sputtering to form silicon oxycarbide (SiOC) composite films. The composition of the films was characterized by Energy dispersive X-ray (EDX) analysis. The Young’s modulus and hardness of the films were measured by nanoindentation technique. The influence of oxygen/carbon ratio and rapid thermal annealing (RTA) temperature on the residual stress of the composite films was investigated by film-substrate curvature measurement using the Stoney’s equation. By choosing the appropriate composition and post processing, a film with relative low residual stress could be obtained.


2014 ◽  
Author(s):  
A. M. R. Pinto ◽  
A. Lopez-Aldaba ◽  
M. Lopez-Amo ◽  
O. Frazão ◽  
J. L. Santos ◽  
...  

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