Coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates

2021 ◽  
Author(s):  
Kenya Yonekura ◽  
Tasuku Kawamoto ◽  
Jianbo Liang ◽  
Eiji Shikoh ◽  
Koichi Maezawa ◽  
...  
Keyword(s):  
High Resistivity ◽  
Coplanar Waveguides ◽  
Si Substrates ◽  
Metal Foils

Copper coplanar waveguides in Si substrates for 10 GHz applications

2004 ◽  
Vol 22 (3) ◽  
pp. 847 ◽  
Author(s):  
R. E. Amaya ◽  
V. Levenets ◽  
N. G. Tarr ◽  
C. Plett
Keyword(s):  
Coplanar Waveguides ◽  
Si Substrates

Charge accumulation effects and microwave absorption of coplanar waveguides fabricated on high–resistivity Si with SiO2 insulation layer

1995 ◽  
Vol 67 (18) ◽  
pp. 2624-2626 ◽  
Author(s):  
T. Pfeifer ◽  
H.–M. Heiliger ◽  
E. Stein von Kamienski ◽  
H. G. Roskos ◽  
H. Kurz
Keyword(s):  
Microwave Absorption ◽  
High Resistivity ◽  
Coplanar Waveguides ◽  
Charge Accumulation ◽  
Insulation Layer

Development of μ-Fluorescent and Diffracted X-Ray Spectrometer with a Fine Focused X-Ray Beam and its Application for Ulsi Microanalysis

1995 ◽  
Vol 39 ◽  
pp. 155-164
Author(s):  
Naoki Yamamoto
Keyword(s):  
The Other ◽  
High Resistivity ◽  
Wall Surface ◽  
Glass Capillary ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Fine Glass ◽  
Crystal Phases ◽  
Membrane Type

A fluorescent and diffracted X-ray spectrometer with an X-ray sub-micron beam was developed for the analysis of stress, crystal structure, and contamination in micro-regions of ULSIs. A fine glass capillary with a parabolic cross-sectional inner wall surface was made to form a micro X-ray beam. A micro-focus X-ray generator with a membrane-type target was also developed for use with the capillary. The equipment was used to analyze the crystal phases of Ti silicide fine lines and the strains in Al interconnections.The resistance of Ti-silicide lines increases the line width narrows under about 0.5 μrn. This is because of the growth of crystal phases of TiSi2(C49) and TiSi(B27) with high resistivity ﹛60 to 100 μΩ-cm).Hillocks of Al grow at line edges when Al layers are compressed by Si substrates and surrounding insulating layers. On the other hand, when the Al is extended by these layers, voids form in the AI lines.

Design of a Ku-band Wilkinson power divider on surface-stabilized high-resistivity Si substrates

2005 ◽  
Vol 44 (5) ◽  
pp. 436-439 ◽  
Author(s):  
Taeksoo Ji ◽  
Hargsoon Yoon ◽  
Jose K. Abraham ◽  
Vijay K. Varadan
Keyword(s):  
Power Divider ◽  
High Resistivity ◽  
Si Substrates ◽  
Wilkinson Power Divider ◽  
Ku Band

scholarly journals Crosstalk Between Finite Ground Coplanar Waveguides Over Polyimide Layers for 3-D MMICs on Si Substrates

2004 ◽  
Vol 52 (4) ◽  
pp. 1292-1301 ◽  
Author(s):  
J. Papapolymerou ◽  
G.E. Ponchak ◽  
E. Dalton ◽  
A. Bacon ◽  
M.M. Tentzeris
Keyword(s):  
Coplanar Waveguides ◽  
Si Substrates

scholarly journals Strip Detectors Processed on High-Resistivity 6-inch Diameter Magnetic Czochralski Silicon (MCz-Si) Substrates

2014 ◽  
Vol 61 (1) ◽  
pp. 611-618 ◽  
Author(s):  
X. Wu ◽  
J. Harkonen ◽  
J. Kalliopuska ◽  
E. Tuominen ◽  
T. Maenpaa ◽  
...  
Keyword(s):  
High Resistivity ◽  
Czochralski Silicon ◽  
Si Substrates ◽  
Strip Detectors

Monolithic GaAs/Si Integration

1988 ◽  
Vol 126 ◽  
Author(s):  
George W. Turner ◽  
H. K. Choi ◽  
J. P. Mattia ◽  
C. L. Chen ◽  
S. J. Eglash ◽  
...  
Keyword(s):  
Optical Interconnects ◽  
Diode Lasers ◽  
Logic Circuits ◽  
High Resistivity ◽  
Molecular Beam Epitaxy Growth ◽  
Circuit Performance ◽  
Monolithically Integrated ◽  
Si Substrates ◽  
Cw Operation ◽  
Photoconductive Detectors

ABSTRACTThe recent demonstrations of room-temperature cw operation of diode lasers fabricated in GaAs/AlGaAs layers grown on Si wafers have encouraged efforts to develop monolithic GaAs/Si integration technology for applications such as optical interconnects between VLSI subsystems. This paper summarizes our current work in this area, which is focused on the development of a highspeed, MSI-scale monolithic GaAs/Si test chip that integrates Si MOSFET circuits with diode lasers, LEDs, photoconductive detectors, and MESFET logic circuits fabricated in GaAs/AlGaAs layers grown by molecular beam epitaxy. Growth issues and processing considerations that affect device and circuit performance are addressed, and the characteristics of LEDs monolithically integrated with Si driver circuits and of GaAs microwave MESFETs fabricated on high-resistivity Si substrates are reported.

Picosecond optoelectronic on-wafer characterization of coplanar waveguides on high-resistivity Si and substrates

1996 ◽  
Vol 31 (1-4) ◽  
pp. 385-395 ◽  
Author(s):  
T. Pfeifer ◽  
H.-M. Heiliger ◽  
T. Löffler ◽  
H.G. Roskos ◽  
H. Kurz
Keyword(s):  
High Resistivity ◽  
Coplanar Waveguides
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