Surface Contamination Effects on Bonding Performance in Atomic Diffusion Bonding of Wafers using Amorphous Si Thin Films

2021 ◽  
Author(s):  
T. Amino ◽  
M. Uomoto ◽  
T. Shimatsu
Keyword(s):  
Thin Films ◽  
Diffusion Bonding ◽  
Surface Contamination ◽  
Atomic Diffusion ◽  
Bonding Performance ◽  
Amorphous Si ◽  
Contamination Effects

Phase Variation of Amorphous-Si and Poly-Si Thin Films with Excimer Laser Irradiation

1996 ◽  
Vol 35 (Part 2, No. 11B) ◽  
pp. L1473-L1475 ◽  
Author(s):  
Kuninori Kitahara ◽  
Katsuyuki Suga ◽  
Akito Hara ◽  
Kazuo Nakajima
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Phase Variation ◽  
Excimer Laser Irradiation ◽  
Amorphous Si

Experimental Research on Vacuum Diffusion Bonding of AS-Extruded AZ61 Magnesium Alloy

2013 ◽  
Vol 788 ◽  
pp. 34-37
Author(s):  
Fei Lin ◽  
Jie Li ◽  
Hong Wei Zhao ◽  
Zhi Tong Chen ◽  
Qing Sen Meng
Keyword(s):  
Magnesium Alloy ◽  
Diffusion Bonding ◽  
Diffusion Theory ◽  
Holding Time ◽  
Atomic Diffusion ◽  
Az61 Magnesium Alloy ◽  
Measurement Results ◽  
Diffusion Temperature ◽  
Shearing Strength

Vacuum diffusion bonding of as-extruded AZ61 magnesium alloy was investigated according to atomic diffusion theory. The effects of the diffusion temperature and holding time on the quality of the bonding joint are investigated by means of microstructure analysis, shearing strength test and microhardness testing. The shearing test results showed that the maximum shearing strength reached 51.95MPa with the temperature of 470°C and the holding time of 90min. And the diffusion temperature and holding time have a great effect on the quality of the bonding joints. The microhardness measurement results showed that the microhardness value at the bonding joint was maximum.

Blue-violet photoluminescence from amorphous Si-in-SiNx thin films with external quantum efficiency in percentages

2006 ◽  
Vol 88 (9) ◽  
pp. 093102 ◽  
Author(s):  
L. B. Ma ◽  
R. Song ◽  
Y. M. Miao ◽  
C. R. Li ◽  
Y. Q. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Amorphous Si

scholarly journals Modification of thermal conductivity and thermal boundary resistance of amorphous Si thin films by Al doping

RSC Advances ◽  
2017 ◽  
Vol 7 (13) ◽  
pp. 7901-7905 ◽  
Author(s):  
Tianzhuo Zhan ◽  
Masahiro Goto ◽  
Yibin Xu ◽  
Yohei Kinoshita ◽  
Mamoru Ishikiriyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Al Doping ◽  
Amorphous Si

We investigate the effects of Al doping on the thermal conductivity and thermal boundary resistance of a-Si thin films.

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