scholarly journals Application of 532 nm YAG-Laser Annealing to Crystallization of Amorphous Si Thin Films Deposited on Glass Substrates

2008 ◽  
Vol 18 (3) ◽  
pp. 113-116 ◽  
Author(s):  
Jong-Won Lee ◽  
Byung-Soo So ◽  
Ha-Seung Chung ◽  
Jin-Ha Hwang
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Yag Laser ◽  
Glass Substrates ◽  
Amorphous Si ◽  
532 Nm

Optical, Structural and Electrical Characteristics of Explosively Crystallized Si Thin Films on Glass Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
G. Auvert ◽  
D. Bensahel ◽  
A. Perio ◽  
F. Morin ◽  
G.A. Rozgonyi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Annealing ◽  
The State ◽  
Electrical Characteristics ◽  
Glass Substrates ◽  
Explosive Crystallization ◽  
Cw Laser ◽  
Structural And Electrical Properties ◽  
Si Films

ABSTRACTExplosive Crystallization occurs in cw laser annealing on a-Si films deposited on glass substrates at laser scan speeds higher than 30 cm/sec. Optical, structural and electrical properties of the crystallized films at various laser scan speeds confirm the existence of two kinds of explosive growth depending on the state of crystallinity of the starting material.

Rapid laser annealing of Cu(In,Ga)Se2 thin films by using a continuous wave Nd:YAG laser (λ0= 532 nm)

2017 ◽  
Vol 70 (8) ◽  
pp. 809-815 ◽  
Author(s):  
Nam-Hoon Kim ◽  
Pil Ju Ko ◽  
Geum-Bae Cho ◽  
Chan Il Park
Keyword(s):  
Thin Films ◽  
Nd:Yag Laser ◽  
Laser Annealing ◽  
Continuous Wave ◽  
532 Nm ◽  
Rapid Laser Annealing

Pulsed Laser Deposition of High Quality ZnO Thin Films

1992 ◽  
Vol 285 ◽  
Author(s):  
S. Amirhaghi ◽  
V. Craciun ◽  
F. Beech ◽  
M. Vickers ◽  
S. Tarling ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Visible Region ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Krf Excimer Laser ◽  
Substrate Temperatures ◽  
532 Nm

ABSTRACTThin films of ZnO have been grown on silicon and glass substrates by the pulsed laser deposition method. The effects of the oxygen partial pressure, substrate temperature and laser wavelength on the structural and optical properties of the films have been studied. The KrF excimer laser (at 248 nm) was found to produce better quality thin films than the frequency doubled Nd:YAG laser (532 nm). Layers produced at substrate temperatures as low as 300°C were c-axis oriented with a FWHM value for the 002 XRD reflection less than 0.2° and exhibited optical transmission higher than 80% in the visible region.

INDIUM SELENIDE THIN FILMS BY LASER IRRADIATION OF In/Se LAYERED STRUCTURE

2013 ◽  
Vol 20 (06) ◽  
pp. 1350058 ◽  
Author(s):  
R. E. ORNELAS-ACOSTA ◽  
S. SHAJI ◽  
D. AVELLANEDA ◽  
G. A. CASTILLO ◽  
T. K. DAS ROY ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Irradiation ◽  
Layered Structure ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Structure Morphology ◽  
532 Nm

In this work, we report the formation of In 6 Se 7 thin films by laser irradiation of In / Se layered structure. Indium layer was deposited on glass substrates by thermal evaporation on which selenium thin film was grown by chemical bath deposition from an aqueous solution containing 10 ml of sodium selenosulphate (0.1 M), 1.0 ml acetic acid (25%) and 70 ml distilled water during 5 min. The In / Se coated glass substrates were irradiated using a 532 nm continuous laser for 3–5 min. Structure, morphology, optical and electrical properties of the irradiated thin films were analyzed using various techniques. X-ray diffraction analysis showed that the irradiated thin films were In 6 Se 7 of monoclinic structure. X-ray photoelectron spectroscopic study on the laser irradiated samples provided uniform relative composition of In and Se in the thin films formed after laser irradiation. The morphology, optical and electrical properties of the irradiated samples were investigated. The optical band gap of the In 6 Se 7 thin films was 2.2 eV and also, the thin films were photoconductive.

Reduction of Sn02 by A-Si1-XGeX

1994 ◽  
Vol 337 ◽  
Author(s):  
F. Edelman ◽  
R. Brener ◽  
C. Cytermann ◽  
M. Eizenberg ◽  
R. Weil ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Low Temperatures ◽  
Tin Dioxide ◽  
Silicon Oxide ◽  
Strong Dependence ◽  
Reduction Process ◽  
Glass Substrates ◽  
Rf Glow Discharge ◽  
Amorphous Si

Thin films of amorphous Si1−xGex:H with x=0, 0.3, 0.6, and 1 were deposited by RF glow discharge at 200-250°C on SnO2/glass substrates. The tin dioxide was reduced by heat treatment at the temperature range of 400-600°C resulting in a layered structure of silicon oxide, tin suboxide and ß-Sn which formed at the a-Si1−xGex:H/SnO2 interface. A strong dependence of the extent of the reduction on the Ge content in the a-Si1−xGex:H films was found: at low temperatures (T≤475°C) the Si-rich layers were more reactive, whereas at T≥475°C the Ge-rich films totally reduced the SnO2. The interfacial reduction process was followed by a drop in the transparency and drastic changes in the sheet resistance of the a-Si1−xGex:H/SnO2 contacts.PACS: 61.43.Dq; 78.66; 82.65.-i; 82.65.Fr; 82.65.Yh

scholarly journals Fabrication of .BETA.-FeSi2 Thin Films by PLD Method and Improvement of Film-quality by Laser Annealing Process Using a Nd :YAG Laser

Shinku ◽  
2004 ◽  
Vol 47 (3) ◽  
pp. 224-227
Author(s):  
Akio SUZUKI ◽  
Mitsuhiro YASUI ◽  
Takanori AOKI ◽  
Tatsuhiko MATSUSHITA ◽  
Masahiro OKUDA ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Annealing Process ◽  
Yag Laser

Cu(In,Ga)Se2 thin films annealed using a continuous wave Nd:YAG laser (λ0 = 532 nm): Effects of laser-annealing time

2017 ◽  
Vol 71 (12) ◽  
pp. 1038-1047 ◽  
Author(s):  
Myoung Han Yoo ◽  
Pil Ju Ko ◽  
Nam-Hoon Kim ◽  
Hyun-Yong Lee
Keyword(s):  
Thin Films ◽  
Annealing Time ◽  
Nd:Yag Laser ◽  
Laser Annealing ◽  
Continuous Wave ◽  
532 Nm

Chemical synthesis and study of structural and optoelectronic properties of CdS thin films: Effect of SILAR growth cycles

2015 ◽  
Vol 9 (3) ◽  
pp. 2461-2469
Author(s):  
S. R. Gosavi ◽  
K. B. Chaudhari
Keyword(s):  
Thin Films ◽  
Average Crystallite Size ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Growth Cycles ◽  
Glass Substrates ◽  
Layer Adsorption ◽  
Cds Thin Films ◽  
Structural And Optoelectronic Properties ◽  
Deposited Film

CdS thin films were deposited on glass substrates by using successive ionic layer adsorption and reaction (SILAR) method at room temperature. The effect of SILAR growth cycles on structural, morphological, optical and electrical properties of the films has been studied.  The thickness of the deposited film is measured by employing weight difference method. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The values of average crystallite size were found to be 53 nm, 58 nm, 63 nm and 71 nm corresponding to the thin films deposited with 30, 40, 50 and 60 SILAR growth cycles respectively. From the UV–VIS spectra of the deposited thin films, it was seen that both the absorption properties and energy bandgap of the films changes with increasing number of SILAR growth cycles. A decrease of electrical resistivity has been observed with increasing SILAR growth cycle. 

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